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JCT616A-FO PDF预览

JCT616A-FO

更新时间: 2024-11-24 14:56:03
品牌 Logo 应用领域
捷捷微 - JJM 可控硅
页数 文件大小 规格书
7页 1103K
描述
标准型单向可控硅

JCT616A-FO 数据手册

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JIEJIE MICROELECTRONICS CO. , Ltd  
JCT616A-FO  
16A SCRs  
Rev.1.1  
DESCRIPTION:  
With high ability to withstand the shock loading of large  
current, JCT616A-FO of silicon controlled rectifiers  
provide high dv/dt rate with strong resistance to  
electromagnetic interference. They are especially  
recommended for use on solid state relay, motorcycle,  
power charger, T-tools etc. From all three terminals to  
external heatsink, JCT616A-FO provides a rated  
insulation voltage of 2500 VRMS,complying with UL  
standards (File ref: E252906).PackageTO-220A is  
RoHS compliant. (2011/65/EU)  
Ins  
TO-220A  
Insulated  
1
2
3
MAIN FEATURES  
K(1)  
A(2)  
Symbol  
VDRM/ VRRM  
IT(RMS)  
JCT616A-FO  
600V  
G(3)  
16A  
IGT  
3~6mA  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Tstg  
Value  
Unit  
V
Storage junction temperature range  
Operating junction temperature range  
Repetitive peak off-state voltage(Tj=150)  
Repetitive peak reverse voltage(Tj=150)  
-40-150  
-40-150  
600  
Tj  
VDRM  
VRRM  
600  
V
TO-220A(Ins)  
RMS on-state current  
IT(RMS)  
IT(AV)  
16  
10  
A
A
(TC=100)  
Average on-state  
current  
TO-220A(Ins)  
(Tc=100)  
Non repetitive surge peak on-state current  
(tp=10ms)  
I2t value for fusing (tp=10ms)  
ITSM  
I2t  
180  
162  
100  
4
A
A2s  
As  
A
Critical rate of rise of on-state current  
(IG=2×IGT)  
dI/dt  
IGM  
Peak gate current  
TEL+86-513-83639777  
http://www.jjwdz.com  
1

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