JIEJIE MICROELECTRONICS CO. , Ltd.
JCT612H
12A SCR
Rev.A.1.0
DESCRIPTION:
With high ability to withstand the shock loading of
large current, JCT612H of silicon controlled rectifiers
provides high dV/dt rate with strong resistance to
electromagnetic interference. It is especially
recommended for use on solid state relay,
motorcycle, power charger, T-tools etc.
Package TO-251 is RoHS compliant.
MAIN FEATURES
Symbol
IT(RMS)
Value
12
Unit
A
VDRM/VRRM
IGT
600
≤15
V
mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
-40-150
-40-125
600
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (Tj=25℃)
Repetitive peak reverse voltage (Tj=25℃)
Average on-state current (TC≤63℃)
RMS on-state current (TC≤63℃)
Tj
VDRM
VRRM
IT(AV)
IT(RMS)
600
V
7.6
A
12
A
Non repetitive surge peak on-state current
(tp=10ms, Tj=25℃)
Non repetitive surge peak on-state current
(tp=8.3ms, Tj=25℃)
140
ITSM
A
154
98
I2t value for fusing (tp=10ms , Tj=25℃)
I2t
A2s
A/μs
A
Critical rate of rise of on-state current
(IG=2×IGT, f=100Hz , Tj=125℃)
dI/dt
IGM
150
4
Peak gate current (tp=20μs , Tj=125℃)
TEL:+86-513-68528666
http://www.jjwdz.com
1