Datasheet > JCT612A-FO

JCT612A-FO

更新时间： 2023-12-06 20:03:13

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
7页	1113K
描述
标准型单向可控硅

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数据手册

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JCT612A-FO 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd

JCT612A-FO

12A SCRs

Rev.1.1

DESCRIPTION:

With high ability to withstand the shock loading of large

current, JCT612A-FO of silicon controlled rectifiers

provide high dv/dt rate with strong resistance to

electromagnetic interference. They are especially

recommended for use on solid state relay, motorcycle,

power charger, T-tools etc. From all three terminals to

external heatsink, JCT612A-FO provides a rated

insulation voltage of 2500 V_RMS, complying with UL

standards (File ref: E252906). Package TO-220A is

RoHS compliant. (2011/65/EU)

Ins

TO-220A

Insulated

MAIN FEATURES

A(2)

K(1)

Symbol

V_DRM/ V_RRM

I_T(RMS)

JCT612A-FO

600V

G(3)

12A

I_GT

3~6mA

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

Unit

℃

Storage junction temperature range

Operating junction temperature range

Repetitive peak off-state voltage(T_j=150℃)

Repetitive peak reverse voltage(T_j=150℃)

-40-150

600

T_j

V_DRM

V_RRM

600

TO-220A(Ins)

RMS on-state current

I_T(RMS)

I_T(AV)

(Tc=110℃)

Average on-state

current

TO-220A(Ins)

(Tc=110℃)

Non repetitive surge peak on-state current

(tp=10ms)

I²t value for fusing (tp=10ms)

I_TSM

I²t

140

A²s

A/μs

Critical rate of rise of on-state current

(I_G=2×I_GT)

dI/dt

I_GM

100

Peak gate current

TEL：+86-513-83639777

http://www.jjwdz.com

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