Datasheet > JCT151F-800R

JCT151F-800R

更新时间： 2023-12-06 20:11:22

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
8页	1032K
描述
标准型单向可控硅

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数据手册

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JCT151F-800R 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd.

JCT151F-800R

12A SCR

Rev.A.1.0

DESCRIPTION:

With high ability to withstand the shock loading of large

current, JCT151F-800R of silicon controlled rectifiers

provides high dV/dt rate with strong resistance to

electromagnetic interference. It is especially recommended

for use on solid state relay, motorcycle,power charger,

T-tools etc. From all three terminals to external

heatsink, JCT151F-800R provides a rated insulation

voltage of 2000 V_RMS,complying with UL standards

(File ref: E252906). Package TO-220F is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

800

≤15

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

800

Unit

℃

Storage junction temperature range

Operating junction temperature range

T_j

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤91℃)

RMS on-state current (T_C≤91℃)

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

800

7.5

Non repetitive surge peak on-state current

(t_p=10ms, T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms, T_j=25℃)

120

I_TSM

132

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

100

A/μs

TEL：+86-513-68528666

http://www.jjwdz.com

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