Datasheet > JCT1240SJ

JCT1240SJ

更新时间： 2024-11-06 14:55:59

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
8页	902K
描述
标准型单向可控硅

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JCT1240SJ 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd.

JCT1240SJ

40A SCR

Rev.A.1.0

DESCRIPTION:

With high ability to withstand the shock loading of

large current, JCT1240SJ SCR provides high dV/dt

rate with strong resistance to electromagnetic

interference.It is especially recommended for use

on solid state relay, motorcycle, power charger,

T-tools etc. Package TO-247J is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

1200

≤45

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

1200

Unit

℃

Storage junction temperature range

Operating junction temperature range

T_j

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤78℃)

RMS on-state current (T_C≤78℃)

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

Non repetitive surge peak on-state current

(t_p=10ms, T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms, T_j=25℃)

500

I_TSM

540

1250

200

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

A/μs

Peak gate current (t_p=20μs , T_j=125℃)

I_GM

Average gate power dissipation (T_j=125℃)

P_G(AV)

TEL：+86-513-68528666

http://www.jjwdz.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与JCT1240SJ相关器件

型号	品牌	获取价格	描述	数据表
JCT1240Z	JJM	获取价格	40A SCRs
JCT1240Z	JJM	获取价格	标准型单向可控硅
JCT1255	JJM	获取价格	55A SCRs
JCT1255SJ	JJM	获取价格	标准型单向可控硅
JCT1255T	JJM	获取价格	标准型单向可控硅
JCT1255Y	JJM	获取价格	55A SCRs
JCT1255Z	JJM	获取价格	55A SCRs
JCT1255Z	JJM	获取价格	标准型单向可控硅
JCT1275CS	JJM	获取价格	标准型单向可控硅
JCT1275IS	JJM	获取价格	标准型单向可控硅