Datasheet > JCT1231C

JCT1231C

更新时间： 2024-10-02 14:54:55

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
8页	1027K
描述
标准型单向可控硅

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数据手册

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JCT1231C 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd.

JCT1231C

30ASCR

Rev.A.1.0

DESCRIPTION:

With high ability to withstand the shock loading of

large current, JCT1231C SCR provides high dv/dt

rate with strong resistance to electromagnetic

interference. It is especially recommended

for use on solid state relay, motorcycle, power

charger, T-tools etc. Package TO-220C is RoHS

compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

1200

≤40

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

1200

Unit

℃

Storage junction temperature range

Operating junction temperature range

T_j

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤93℃)

RMS on-state current (T_C≤93℃)

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

Non repetitive surge peak on-state current

(t_p=10ms , T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms , T_j=25℃)

370

I_TSM

400

685

200

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

A/μs

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

I_GM

Peak gate current (t_p=20μs , T_j=125℃)

TEL：+86-513-68528666

http://www.jjwdz.com

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