N 沟道增强型场效应晶体管
R
N-CHANNEL MOSFET
JCS12N65EI
封装 Package
主要参数MAIN CHARACTERISTICS
12A
ID
650V
VDSS
Rdson-max
(Vgs=10V)
Qg-Typ
0.9Ω
30nC
APPLICATIONS
用途
High efficiency switch
mode power supplies
高频开关电源
电子镇流器
LED 电源
Electronic lamp ballasts
based on half bridge
LED power supplies
FEATURES
产品特性
低栅极电荷
Low gate charge
Low Crss (typical 15.4pF )
Fast switching
低 Crss (典型值 15.4pF)
开关速度快
100% avalanche tested
Improved dv/dt capability
RoHS product
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
订货信息 ORDER MESSAGE
订货型号 Order codes
印记
封装
有卤-条管
无卤-条管
Halogen-Free-Tube
有卤-编带
Halogen-Reel
N/A
无卤-编带
Marking
Package
Halogen-Tube
Halogen-Free-Reel
JCS12N65FEI-F1-B JCS12N65FEI-F1-BR
JCS12N65FEI-F2-B JCS12N65FEI-F2-BR
N/A
N/A
N/A
JCS12N65F TO-220MF-K1
JCS12N65F TO-220MF-K2
N/A
JCS12N65BEI-B-B
JCS12N65SEI-S-B
JCS12N65CEI-C-B
JCS12N65BEI-B-BR
N/A
JCS12N65B
TO-262
TO-263
TO-220C
JCS12N65SEI-S-BR JCS12N65SEI-S-A JCS12N65SEI-S-AR JCS12N65S
JCS12N65CEI-C-BR
N/A
N/A
JCS12N65C
版本:202105B
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