Datasheet > JBL102E

JBL102E

更新时间： 2024-11-18 17:02:07

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	1079K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JBL102E 数据手册

JBL102E

100V 2.0mW N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

100

3.0

Unit

•

Ultra-low R_DS(ON)

Low Gate Charge

V_GS(th)

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

246

2.0

R_DS(ON)(@ V_GS= 10V)

Halogen-free and RoHS-compliant

Applications

•

Motor Driving in Power Tool, E-vehicle, Robotics

Current Switching in DC/DC & AC/DC (SR) Sub-systems

Power Management in Telecom., Industrial Automation, CE

PowerJE^®10x12 Top View

PowerJE^®10x12 Bottom View

Drain

Gate

Source

Ordering Information

Device

Package

# of Pins

Marking

MSL

T_J(°C)

Media

13-inch Reel

Quantity (pcs)

JVL102E

PowerJE®10x12

VL102E

-55 to 150

2000

(@ T = 25°C unless otherwise specified)

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

246

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

156

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

984

E_AS

1350

290

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

116

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 20A

V_DS= 50V

I_D= 20A

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

Page 1 of 6

12 3 4 5 6

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