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JBL101N PDF预览

JBL101N

更新时间: 2024-11-18 17:01:07
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 788K
描述
中压 N-ch (40V ~ 400V)

JBL101N 数据手册

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JBL101N  
100V 1.2mW N-Ch Power MOSFET  
Features  
Product Summary  
Parameter  
VDS  
Value  
100  
2.9  
Unit  
V
Ultra-low RDS(ON)  
Low Gate Charge  
VGS(th)_Typ  
ID (@ VGS = 10V) (1)  
V
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
325  
1.2  
A
RDS(ON)_Typ (@ VGS = 10V)  
mW  
Applications  
Power Management in Computing, CE, IE 4.0, Communications  
Current Switching in DC/DC & AC/DC (SR) Sub-systems  
Load Switching, Quick/Wireless Charging, Motor Driving  
PowerJE®10x12 Top View  
PowerJE®10x12 Bottom View  
Drain  
Tab  
Gate  
Pin 1  
S
Pin 1  
Source  
G
Pins 2-8  
Pin 1  
Ordering Information  
Device  
TJ (°C)  
Package  
# of Pins  
Marking  
MSL  
Media  
Quantity (pcs)  
JBL101N-13  
PowerJE®10x12  
8
BL101N  
1
-55 to 150 13-inch Reel  
2000.00  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
±20  
VGS  
V
TC = 25°C  
325  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
205  
Pulsed Drain Current (2)  
Avalanche Energy (3)  
IDM  
1300  
1823  
313  
A
EAS  
mJ  
TC = 25°C  
Power Dissipation (4)  
PD  
W
TC = 100°C  
125  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
20  
10  
8
ID = 20A  
VDS = 50V  
ID = 20A  
16  
12  
8
6
4
4
2
0
0
0
5
10  
15  
20  
0
50  
100  
150  
200  
250  
VGS (V)  
Qg (nC)  
Jiangsu JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.0  
Page 1 of 6  

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