Datasheet > JBL101N

JBL101N

更新时间： 2024-04-09 18:59:50

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描述
中压 N-ch (40V ~ 400V)

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数据手册

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JBL101N 数据手册

JBL101N

100V 1.2mW N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

100

2.9

Unit

•

Ultra-low R_DS(ON)

Low Gate Charge

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

325

1.2

R_{DS(ON)_Typ}(@ V_GS= 10V)

Applications

•

Power Management in Computing, CE, IE 4.0, Communications

Current Switching in DC/DC & AC/DC (SR) Sub-systems

Load Switching, Quick/Wireless Charging, Motor Driving

PowerJE^®10x12 Top View

PowerJE^®10x12 Bottom View

Drain

Tab

Gate

Pin 1

Source

Pins 2-8

Pin 1

Ordering Information

Device

T_J(°C)

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JBL101N-13

PowerJE®10x12

BL101N

-55 to 150 13-inch Reel

2000.00

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_C= 25°C

325

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

205

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

1300

1823

313

E_AS

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

125

Junction & Storage Temperature Range

T_J, T_STG

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 20A

V_DS= 50V

I_D= 20A

100

150

200

250

V_GS(V)

Q_g(nC)

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

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