Datasheet > JBE084M

JBE084M

更新时间： 2024-11-26 17:01:35

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	566K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

获取价格

数据手册

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JBE084M 数据手册

JBE084M

80V 4.1mW N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Typ.

Unit

•

Ultra-low R_DS(ON)

Low Gate Charge

V_GS(th)

I_D(@ V_GS= 10V) ⁽¹⁾

3.0

136

4.1

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

R_DS(ON)(@ V_GS= 10V)

Halogen-free and RoHS-compliant

Applications

•

Power Management in Computing, CE, IE 4.0, Communications

Current Switching in DC/DC & AC/DC (SR) Sub-systems

Load Switching, Quick/Wireless Charging, Motor Driving

TO-263-3L Top View

Ordering Information

Device

T_J(°C)

-55 to 150

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JBE084M

TO-263-3L

BE084M

13-inch Reel

800

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

V_GS

T_C= 25°C

136

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

544

E_AS

434

T_C= 25°C

166

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

T_J, T_STG

Junction & Storage Temperature Range

-55 to 150

°C

R_DS(ON)vs. V_GS

Gate Charge

I_D= 20A

V_DS= 40V

I_D= 20A

V_GS(V)

Q_g(nC)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.2

Page 1 of 6

12 3 4 5 6

中文翻译

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