是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-254AA |
包装说明: | FLANGE MOUNT, S-MSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.26 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 12 A | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 150 |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | S-MSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Qualified |
参考标准: | MIL-19500/624B | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTX2N7370 | MICROSEMI |
完全替代 |
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JAN2N7370 | MICROSEMI |
完全替代 |
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N7371 | MICROSEMI |
获取价格 |
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JANTXV2N7372 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal, | |
JANTXV2N7373 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA | |
JANTXV2N7434 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide | |
JANTXV2N918 | MOTOROLA |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic | |
JANTXV2N918 | MICROSEMI |
获取价格 |
NPN LOW POWER SILICON TRANSISTOR | |
JANTXV2N918UB | MICROSEMI |
获取价格 |
NPN LOW POWER SILICON TRANSISTOR | |
JANTXV2N930 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 30MA I(C) | TO-18 | |
JANTXV2N930UB | ETC |
获取价格 |
BJT | |
JANTXV3890A | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN |