Datasheet > JANTXV2N7368

JANTXV2N7368

更新时间： 2024-09-23 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管局域网
页数	文件大小	规格书
15页	81K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 10A I(C) \| TO-254

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANTXV2N7368 数据手册

The documentation process conversion

measures necessary to comply with this

revision shall be completed by 22 January 1998

INCH-POUND

MIL-PRF-19500/622A

22 October 1997

SUPERSEDING

MIL-S-19500/622

5 April 1993

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor. Four levels of product

assurance are provided as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO - 254).

1.3 Maximum ratings.

and T

θJC

CBO

CEO

EBO

STG

= +25°C

V dc

7.0

A dc

4.0

A dc

°C

°C/W max

2N7368

115

-65 to +200

1.5

1/ Derate linearly 0.657 W/°C above T = +25°C.

1.4 Primary electrical characteristics.

FE2

|h |

BE(SAT)1

CE(SAT)1

obo

= 2.0 V dc

= 5.0 A dc

= 0.5 A dc

= 5.0 A dc

= 0.5 A dc

= 10 V dc

V = 10 V dc

I = 0.5 A dc

= 3.0 A dc

I = 0

f = 100 kHz to 1 MHz

f = 1 MHz

V dc

1.5

V dc

1.0

Min

Max

140

4.0

500

1/ Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH

43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or

by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...15

中文翻译

下载PDF

与JANTXV2N7368相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N7369	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 10A I(C) \| TO-254
JANTXV2N7370	MICROSEMI	获取价格	NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
JANTXV2N7371	MICROSEMI	获取价格	PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
JANTXV2N7372	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal,
JANTXV2N7373	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-254AA
JANTXV2N7434	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide
JANTXV2N918	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
JANTXV2N918	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
JANTXV2N918UB	MICROSEMI	获取价格	NPN LOW POWER SILICON TRANSISTOR
JANTXV2N930	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 30MA I(C) \| TO-18