5秒后页面跳转
JANTXV2N3767 PDF预览

JANTXV2N3767

更新时间: 2024-01-07 01:20:40
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
3页 57K
描述
NPN POWER SILICON TRANSISTOR

JANTXV2N3767 技术参数

生命周期:Active零件包装代码:TO-66
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Qualified参考标准:MIL-19500/518C
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANTXV2N3767 数据手册

 浏览型号JANTXV2N3767的Datasheet PDF文件第2页浏览型号JANTXV2N3767的Datasheet PDF文件第3页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 518  
Devices  
Qualified Level  
JAN  
2N3766  
2N3767  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol 2N3766 2N3767 Units  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
80  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
VCEO  
VCBO  
VEBO  
IB  
80  
100  
6.0  
2.0  
4.0  
25  
Collector Current  
IC  
Total Power Dissipation  
@ TC = +250C (1)  
PT  
-65 to +200  
0C  
Operating & Storage Temperature Range  
Top, T  
stg  
TO-66*  
(TO-213AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C  
7.0  
R
qJC  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N3766  
2N3767  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
VCE = 80 Vdc  
Collector-Emitter Cutoff Current  
VCE = 80 Vdc, VBE = 1.5 Vdc  
VCE = 100 Vdc, VBE = 1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 80 Vdc  
500  
500  
2N3766  
2N3767  
ICEO  
mAdc  
mAdc  
10  
10  
2N3766  
2N3767  
ICEX  
10  
10  
2N3766  
2N3767  
ICBO  
mAdc  
mAdc  
VCB = 100 Vdc  
Emitter-Base Cutoff Current  
VEB = 6.0 Vdc  
IEBO  
500  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTXV2N3767 替代型号

型号 品牌 替代类型 描述 数据表
2N3767LEADFREE CENTRAL

功能相似

暂无描述

与JANTXV2N3767相关器件

型号 品牌 获取价格 描述 数据表
JANTXV2N3771 MICROSEMI

获取价格

NPN HIGH POWER SILICON TRANSISTOR
JANTXV2N3772 MICROSEMI

获取价格

NPN HIGH POWER SILICON TRANSISTOR
JANTXV2N3791 MICROSEMI

获取价格

PNP HIGH POWER SILICON TRANSISTOR
JANTXV2N3792 MICROSEMI

获取价格

PNP HIGH POWER SILICON TRANSISTOR
JANTXV2N3810 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
JANTXV2N3810L ETC

获取价格

TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78
JANTXV2N3810U ETC

获取价格

TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78
JANTXV2N3811 RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-78,
JANTXV2N3811L ETC

获取价格

TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78
JANTXV2N3811U ETC

获取价格

TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78