生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 0.2 A | 最小直流电流增益 (hFE): | 50 |
最高工作温度: | 200 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 1 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N3749 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JANTXV2N3749 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 | |
JANTXV2N3762 | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR | |
JANTXV2N3762L | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR | |
JANTXV2N3763 | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR | |
JANTXV2N3763 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39, | |
JANTXV2N3763L | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR | |
JANTXV2N3764 | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR | |
JANTXV2N3765 | MICROSEMI |
获取价格 |
PNP SWITCHING SILICON TRANSISTOR | |
JANTXV2N3766 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR |