The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 October 2004.
INCH-POUND
MIL-PRF-19500/157P
1 July 2004
SUPERSEDING
MIL-PRF-19500/157N
18 September 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,
TEMPERATURE COMPENSATED, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1,
1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1,
JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)
JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 11.70 volts ± 5 percent, silicon, voltage-
reference, temperature compensated diodes. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance
are provided for each encapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to DO-7 and DO-35) and figure 2 (similar to DO-213AA).
1.3 Maximum ratings. Unless otherwise specified, maximum ratings (TA = +25°C).
PT
IZM (1)
Power derating
above TA = +25°C
TSTG and TJ
mW
500
mA dc
39
°C
mW/°C
-55 to +175
3.33
(1) To guarantee voltage stability, it is necessary to maintain the proper IZ = 7.5 mA dc.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.
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