Datasheet > JANTXV1N6621US

JANTXV1N6621US

更新时间： 2024-10-04 06:39:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		快速恢复能力电源超快恢复二极管快速恢复二极管超快速恢复能力电源
页数	文件大小	规格书
4页	337K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN

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JANTXV1N6621US 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	HERMETIC SEALED, GLASS, D-5A, 2 PIN
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.55
其他特性：	HIGH RELIABILITY	应用：	ULTRA FAST RECOVERY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.6 V	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	最大非重复峰值正向电流：	20 A
元件数量：	1	相数：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	最大输出电流：	1.2 A
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Qualified	参考标准：	MIL-19500
最大重复峰值反向电压：	400 V	最大反向电流：	0.5 µA
最大反向恢复时间：	0.045 µs	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

JANTXV1N6621US 数据手册

1N6620US thru 1N6625US

VOIDLESS-HERMETICALLYSEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/585 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in axial-leaded packages for thru-hole mounting (see separate

data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including standard, fast and ultrafast device types in both through-hole

and surface mount packages.

Package “A”

or D-5A

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount series equivalent to the JEDEC

registered 1N6620 to 1N6625 series

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

•

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

•

Internal “Category I” Metallurgical bonds

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/585

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefix, e.g.

SP6620US, SP6624US, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Axial-leaded equivalents also available (see separate

data sheet for 1N6620 thru 1N6625)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Junction Temperature: -65^oC to +150^oC

• Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

• Peak Forward Surge Current @ 25^oC: 20 Amps (except

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead plating.

1N6625 which is 15 Amps)

Note: Test pulse = 8.3 ms, half-sine wave.

• Average Rectified Forward Current (I_O) at T_EC=+110^oC:

1N6620 thru 1N6622: 2.0 Amps

•

MARKING: Cathode band only

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 193 mg

1N6623 thru 1N6625: 1.5 Amps

(Derate linearly at 1.5%/^oC for T_EC> +110^oC)

• Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6620 thru 1N6622: 1.2 Amps

See package dimensions and recommended pad

layout on last page

1N6623 thru 1N6625: 1.0 Amp

(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_O

rating is typical for PC boards where thermal resistance

from mounting point to ambient is sufficiently controlled

where T_J(max)is not exceeded.)

• Thermal Resistance junction to endcap (R_θJEC): 13^oC/W

• Capacitance at V_R= 10 V: 10 pF

• Solder temperature: 260^oC for 10 s (maximum)

10-06-2009 REV E; SD52A.pdf

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与JANTXV1N6621US相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N6622	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, DO-41, HERMETI
JANTXV1N6622	SENSITRON	获取价格	DESCRIPTION: 600 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANTXV1N6622U	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, HERMETIC, MELF-A, 2 PIN
JANTXV1N6622U	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2A, Silicon, MELF-2
JANTXV1N6622US	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon,
JANTXV1N6623	MICROSEMI	获取价格	VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
JANTXV1N6623	SENSITRON	获取价格	DESCRIPTION: 800 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANTXV1N6623U	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, MELF-2
JANTXV1N6623U	SENSITRON	获取价格	DESCRIPTION: 800 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTXV1N6623US	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, D

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