Datasheet > JANTXV1N6136AUS

JANTXV1N6136AUS

更新时间： 2024-11-07 05:03:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
5页	169K
描述
Trans Voltage Suppressor Diode, 500W, 136.8V V(RWM), Unidirectional, 1 Element, Silicon, MELF-2

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JANTXV1N6136AUS 数据手册

1N6103US thru 1N6137AUS

and 1N6139US thru 1N6173AUS

Voidless-Hermetically-Sealed Surface

Mount Bidirectional Transient Suppressors

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This surface mount series of industry recognized voidless-hermetically-

sealed Bidirectional Transient Voltage Suppressor (TVS) designs is

military qualified to MIL-PRF-19500/516 and are ideal for high-reliability

applications where a failure cannot be tolerated. They provide a Working

Peak “Standoff” Voltage selection from 5.2 to 152 Volts with two package

sizes for 500 W and 1500 W ratings. They are very robust in hard-glass

construction and also use an internal metallurgical bond identified as

Category I for high-reliability applications. Both of these are also military

qualified to MIL-PRF-19500/516 and are available as both a non suffix part

and an “A” suffix part involving different voltage tolerances as further

described in note 4 on page 2. These devices are also available in axial-

leaded packages for thru-hole mounting by deleting the “US” suffix (see

separate data sheet for 1N6103 thru 1N6173A). Microsemi also offers

numerous other TVS products to meet higher and lower peak pulse power

and voltage ratings in both through-hole and surface-mount packages.

Package “E”

(or “D-5B”)

Package “G”

(or “D-5C”)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High surge current and peak pulse power provides

transient voltage protection for sensitive circuits

•

Military and other high reliability transient protection

Extremely robust construction

•

Triple-layer passivation

Extensive range in Working Peak “Standoff”

Voltage (V_WM) from 5.7 to 152 V

Internal “Category I” metallurgical bonds

Voidless hermetically sealed glass package

•

Available as either 500 W or 1500 W Peak Pulse

Power (P_PP) using two different size packages

JAN/TX/TXV military qualifications available per MIL-PRF-

19500/516 by adding JAN, JANTX, or JANTXV prefix

(consult factory for 1N6103US and 1N6138US)

ESD and EFT protection per IEC6100-4-2 and

IEC61000-4-4 respectively

•

JANS available for 1N6103AUS thru 1N6118AUS per

MIL-PRF-19500/516 as well as further options for

screening in accordance with MIL-PRF-19500 for JANS

on all others in this series by using a “MSP” prefix, e.g.

MSP6119AUS, MSP6143AUS, etc.

Secondary lightning protection per select levels in

IEC61000-4-5

•

Square-end-cap terminals for easy placement

Nonsensitive to ESD per MIL-STD-750 Method

1020

Axial-leaded equivalents also available (see separate

data sheet for 1N6103 thru 1N6173)

•

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Operating (T_J) & Storage Temperature: -55^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass with

Tungsten slugs

• Peak Pulse Power (P_PP) at 25^oC: 500 W for 1N6103US to

1N6137AUS and 1500 W for 1N6139US to 1N6173AUS @

10/1000 µs (also see Figures 1,2 and 3)

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note Previous inventory

had solid Silver (Ag) with Tin/Lead (Sn/Pb) finish.

• Impulse repetition rate (duty factor): 0.01%

•

MARKING: None

• Steady-State Power: 3.0 W for 1N6103US to 1N6137AUS

and 5.0 W for 1N6139US to 1N6173AUS up to T_EC= 150^oC.

Linearly derate above T_EC=150^oC to zero at T_EC=175^oC.

POLARITY: No polarity marking for these

bidirectional TVSs

•

Tape & Reel option: Standard per EIA-481-B

Weight: 539 mg for 500 Watt (E Package)

1100 mg for 1500 Watt (G Package)

• Steady-State Power: 2.0 W for 1N6103US to 1N6137AUS

and 3.0 W for 1N6139US to 1N6173AUS @ T_A= 25^oC (see

note and Figure 4 for linear derating at higher temperatures)

• Thermal Resistance (junction to endcap): 8.3 ^oC/W for

1N6103US to 1N6137AUS and 5.0 ^oC/W for 1N6139US to

1N6173AUS

•

See package dimensions and recommended pad

layouts on last page for both the “E” (D-5B) and “G”

(D-5C) size packages

• Solder Temperatures: 260^oC for 10 s (maximum)

NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where T_OPor T_J(MAX)is not exceeded

05-06-2008 REV D

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4 5

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JANTXV1N6136AUS 替代型号

型号	品牌	替代类型	描述	数据表
1N6136AUS	MICROSEMI	完全替代	Trans Voltage Suppressor Diode, 500W, 136.8V V(RWM), Bidirectional, 1 Element, Silicon, HE
JANTX1N6136AUS	MICROSEMI	完全替代	Trans Voltage Suppressor Diode, 500W, 136.8V V(RWM), Unidirectional, 1 Element, Silicon, M
JAN1N6136AUS	MICROSEMI	完全替代	Trans Voltage Suppressor Diode, 500W, 136.8V V(RWM), Unidirectional, 1 Element, Silicon, M

与JANTXV1N6136AUS相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N6136US	MICROSEMI	获取价格	暂无描述
JANTXV1N6136US	SENSITRON	获取价格	500 W Transient Voltage Suppressor SM
JANTXV1N6137	MICROSEMI	获取价格	BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANTXV1N6137	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 152V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTXV1N6137A	MICROSEMI	获取价格	BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANTXV1N6137A	SENSITRON	获取价格	500 W Transient Voltage Suppressor
JANTXV1N6137AUS	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 152V V(RWM), Unidirectional, 1 Element, Silicon, MEL
JANTXV1N6137US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 152V V(RWM), Unidirectional, 1 Element, Silicon
JANTXV1N6137US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 152V V(RWM), Unidirectional, 1 Element, Silicon, MEL
JANTXV1N6137US	SENSITRON	获取价格	500 W Transient Voltage Suppressor SM

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