5秒后页面跳转
JANTXV1N5616US PDF预览

JANTXV1N5616US

更新时间: 2024-11-15 14:34:07
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
3页 457K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-A, 2 PIN

JANTXV1N5616US 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:MELF
包装说明:HERMETIC SEALED, GLASS, MELF-A, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.23
其他特性:HIGH RELIABILITY, METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JESD-30 代码:E-LELF-R2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Qualified
参考标准:MIL-19500最大重复峰值反向电压:400 V
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N5616US 数据手册

 浏览型号JANTXV1N5616US的Datasheet PDF文件第2页浏览型号JANTXV1N5616US的Datasheet PDF文件第3页 
1N5614/US thru 1N5622/US  
SENSITRON  
___  
STANDARD RECOVERY  
RECTIFIERS  
______________________________________________________________________________________  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 874, REV. C.3  
AV AI L AB L E AS  
1N, JAN, JANTX, JANTXV  
JANS  
JAN EQUIVALENT*  
SJ*, SX*, SV*, SS*  
Standard Recovery Rectifiers  
Qualified per MIL-PRF-19500/427  
DESCRIPTION:  
This voidless hermetically sealed standard recovery rectifier diode series is military qualified per  
MIL-PRF-19500/427 and is targeted for commerical and military aircraft, space, military vehicles,  
shipboard markets and all high reliability applications.  
FEATURES / BENEFITS  
MAXIMUM RATINGS  
Hermetic, non-cavity glass package  
Category I Metallurgically bonded  
All parts are 100% hot solder dipped  
JAN/ JANTX/JANTXV available per  
MIL-PRF-19500/427  
Operating and Storage Temperature: -65oC to +175oC  
Solder temperature: 260 oC for 10s (max)  
Thermal Resistance: 36 oC (junction to lead)  
Thermal Resistance: 13 oC (junction to endcap)  
Forward surge current: 30A @ 8.3 ms half-sine  
“JANS Plus” removes atypical/out of family VF  
ELECTRICAL CHARACTERISTICS  
TYPE  
NUMBER  
PEAK  
MIN  
AVG  
RECTIFIED  
CURRENT  
MAXIMUM  
REVERSE  
CURRENT  
@ PIV  
MAX. PEAK  
FORWARD  
VOLTAGE  
(PULSED)  
VF @ 3A  
MAX.  
SURGE  
CURRENT1  
IFSM  
MAXIMUM  
REVERSE  
RECOVERY  
TIME 2  
INVERSE BREAKDOWN  
VOLTAGE  
VOLTAGE  
Trr  
Amps  
Amps  
Volts  
200  
Volts  
220  
440  
660  
880  
1100  
55C  
100C  
25C  
100C  
V
Amps  
30  
nsec  
1N5614/US  
1N5616/US  
1N5618/US  
1N5620/US  
1N5622/US  
400  
600  
800  
1.0  
.750  
.5  
25  
1.3  
2000  
1000  
Note 1: Io = 1A, 8ms surge  
Note 2: IF=0.5A, IRM=1A, Ir(REC) =.25A  
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from wafer  
fabrication through assembly and testing using our internal specification.  
©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com  

与JANTXV1N5616US相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N5617 MICROSEMI

获取价格

MILITARY RECTIFIERS
JANTXV1N5617 SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-7, HERMETIC SEALED, GLASS PACKAGE
JANTXV1N5617US SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N5617US MICROSEMI

获取价格

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N5618 MICROSEMI

获取价格

MILITARY RECTIFIERS
JANTXV1N5618 VMI

获取价格

Rectifier Diode, 1 Element, 1.5A, 600V V(RRM), Silicon,
JANTXV1N5618UL SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTXV1N5618US MICROSEMI

获取价格

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N5619 MICROSEMI

获取价格

MILITARY RECTIFIERS
JANTXV1N5619 SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2