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JANTXV1N5420US PDF预览

JANTXV1N5420US

更新时间: 2024-11-17 10:05:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复能力电源快速恢复二极管
页数 文件大小 规格书
1页 132K
描述
DIODE 3 A, SILICON, RECTIFIER DIODE, GLASS PACKAGE-2, Rectifier Diode

JANTXV1N5420US 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:GLASS PACKAGE-2针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.32应用:FAST RECOVERY POWER
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LELF-R2最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Qualified
参考标准:MIL-19500/411L最大反向恢复时间:0.4 µs
表面贴装:YES端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

JANTXV1N5420US 数据手册

  

JANTXV1N5420US 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N5420US MICROSEMI

完全替代

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, GLASS PACKAGE-2
1N5420US MICROSEMI

完全替代

VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS

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