Datasheet > JANTXV1N5312

JANTXV1N5312

更新时间： 2024-11-17 04:09:23

品牌	Logo	应用领域
CDI-DIODE		/
页数	文件大小	规格书
17页	94K
描述
Current Regulator Diode, 3.9mA I(S), 2.6V V(L), Silicon, DO-7, HERMETIC SEALED PACKAGE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANTXV1N5312 数据手册

INCH-POUND

MIL-PRF-19500/463G

2 April 2004

SUPERSEDING

MIL-PRF-19500/463F

24 June 2003

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 2 July 2004.

* PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283-1

THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1, 1N7048-1 THROUGH 1N7055-1,

1N7048UR-1 THROUGH 1N7055UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

* The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

Two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).

1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:

a. P = 500 mW (DO-7) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

at L = .375 inch (9.53 mm). (Derate to 0 at +175°C).

b. P = 500 mW (DO-213AB) at T

= +125°C. (Derate to 0 at +175°C).

c. -65°C ≤ T ≤ +175°C; -65°C ≤ T

≤ +175°C.

STG

1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)

and as follows, (nominally .22 mA dc ≤ I ≤ 4.70 mA dc):

a. R

b. R

= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).

ΘJL

= 100°C/W (maximum) junction to end-caps (DO-213AB).

ΘJEC

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...17

中文翻译

下载PDF

与JANTXV1N5312相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N5312UR	CDI-DIODE	获取价格	DIODE 3.9 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB, HERMETIC SEALED PACKAGE-2, Curre
JANTXV1N5312UR-1	MICROSEMI	获取价格	CURRENT REGULATOR DIODES
JANTXV1N5312UR-1	CDI-DIODE	获取价格	Current Regulator Diode, 3.9mA I(S), 2.6V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE
JANTXV1N5313	MICROSEMI	获取价格	Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-204AA,
JANTXV1N5313-1	CDI-DIODE	获取价格	Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-7, HERMETIC SEALED PACKAGE-2
JANTXV1N5313UR	CDI-DIODE	获取价格	DIODE 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB, HERMETIC SEALED PACKAGE-2, Curre
JANTXV1N5313UR-1	CDI-DIODE	获取价格	Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAG
JANTXV1N5313UR-1	MICROSEMI	获取价格	CURRENT REGULATOR DIODES
JANTXV1N5314	MICROSEMI	获取价格	Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-204AA,
JANTXV1N5314-1	CDI-DIODE	获取价格	Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-7, HERMETIC SEALED PACKAGE-2

与JANTXV1N5312相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

14
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

36
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV1N5312

JANTXV1N5312 数据手册

与JANTXV1N5312相关器件

与JANTXV1N5312相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV1N5312

JANTXV1N5312 数据手册

与JANTXV1N5312相关器件

与JANTXV1N5312相关文章

您还可以找

您在本页遇到什么问题？