Datasheet > JANTXV1N5311UR

JANTXV1N5311UR

更新时间： 2024-11-17 03:46:27

品牌	Logo	应用领域
CDI-DIODE		二极管
页数	文件大小	规格书
17页	94K
描述
Current Regulator Diode, 3.6mA I(S), 2.5V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2

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JANTXV1N5311UR 数据手册

INCH-POUND

MIL-PRF-19500/463G

2 April 2004

SUPERSEDING

MIL-PRF-19500/463F

24 June 2003

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 2 July 2004.

* PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283-1

THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1, 1N7048-1 THROUGH 1N7055-1,

1N7048UR-1 THROUGH 1N7055UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

* The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

Two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).

1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:

a. P = 500 mW (DO-7) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

at L = .375 inch (9.53 mm). (Derate to 0 at +175°C).

b. P = 500 mW (DO-213AB) at T

= +125°C. (Derate to 0 at +175°C).

c. -65°C ≤ T ≤ +175°C; -65°C ≤ T

≤ +175°C.

STG

1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)

and as follows, (nominally .22 mA dc ≤ I ≤ 4.70 mA dc):

a. R

b. R

= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).

ΘJL

= 100°C/W (maximum) junction to end-caps (DO-213AB).

ΘJEC

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...17

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与JANTXV1N5311UR相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N5311UR-1	MICROSEMI	获取价格	CURRENT REGULATOR DIODES
JANTXV1N5311UR-1	CDI-DIODE	获取价格	Current Regulator Diode, 3.6mA I(S), 2.5V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE
JANTXV1N5312	CDI-DIODE	获取价格	Current Regulator Diode, 3.9mA I(S), 2.6V V(L), Silicon, DO-7, HERMETIC SEALED PACKAGE-2
JANTXV1N5312UR	CDI-DIODE	获取价格	DIODE 3.9 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB, HERMETIC SEALED PACKAGE-2, Curre
JANTXV1N5312UR-1	MICROSEMI	获取价格	CURRENT REGULATOR DIODES
JANTXV1N5312UR-1	CDI-DIODE	获取价格	Current Regulator Diode, 3.9mA I(S), 2.6V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE
JANTXV1N5313	MICROSEMI	获取价格	Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-204AA,
JANTXV1N5313-1	CDI-DIODE	获取价格	Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-7, HERMETIC SEALED PACKAGE-2
JANTXV1N5313UR	CDI-DIODE	获取价格	DIODE 4.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-213AB, HERMETIC SEALED PACKAGE-2, Curre
JANTXV1N5313UR-1	CDI-DIODE	获取价格	Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAG

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