Datasheet > JANTXV1N5307UR

JANTXV1N5307UR

更新时间： 2024-11-17 06:41:51

品牌	Logo	应用领域
CDI-DIODE		/
页数	文件大小	规格书
17页	94K
描述
Current Regulator Diode, 2.4mA I(S), 2V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2

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JANTXV1N5307UR 数据手册

INCH-POUND

MIL-PRF-19500/463G

2 April 2004

SUPERSEDING

MIL-PRF-19500/463F

24 June 2003

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 2 July 2004.

* PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283-1

THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1, 1N7048-1 THROUGH 1N7055-1,

1N7048UR-1 THROUGH 1N7055UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

* The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

Two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).

1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:

a. P = 500 mW (DO-7) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

at L = .375 inch (9.53 mm). (Derate to 0 at +175°C).

b. P = 500 mW (DO-213AB) at T

= +125°C. (Derate to 0 at +175°C).

c. -65°C ≤ T ≤ +175°C; -65°C ≤ T

≤ +175°C.

STG

1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)

and as follows, (nominally .22 mA dc ≤ I ≤ 4.70 mA dc):

a. R

b. R

= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).

ΘJL

= 100°C/W (maximum) junction to end-caps (DO-213AB).

ΘJEC

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to

Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...17

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与JANTXV1N5307UR相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N5307UR-1	CDI-DIODE	获取价格	Current Regulator Diode, 2.4mA I(S), 2V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2
JANTXV1N5307UR-1	MICROSEMI	获取价格	CURRENT REGULATOR DIODES
JANTXV1N5308	MOTOROLA	获取价格	2.7 mA, SILICON, CURRENT REGULATOR DIODE, DO-204AA
JANTXV1N5308UR-1	MICROSEMI	获取价格	CURRENT REGULATOR DIODES
JANTXV1N5308UR-1	CDI-DIODE	获取价格	Current Regulator Diode, 2.7mA I(S), 2.15V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAG
JANTXV1N5309	MOTOROLA	获取价格	3mA, SILICON, CURRENT REGULATOR DIODE, DO-204AA
JANTXV1N5309-1	MICROSEMI	获取价格	Current Regulator Diode, 3mA I(S), 2.25V V(L), Silicon, DO-35, DO-35, 2 PIN
JANTXV1N5309-1E3	MICROSEMI	获取价格	DIODE CURRENT REGULATOR DIODE, Current Regulator Diode
JANTXV1N5309UR-1	MICROSEMI	获取价格	CURRENT REGULATOR DIODES
JANTXV1N5309UR-1	CDI-DIODE	获取价格	Current Regulator Diode, 3mA I(S), 2.25V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-

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