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JANTXV1N5304

更新时间： 2024-11-17 06:20:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
17页 84K
描述
Current Regulator Diode, 1.8mA I(S), 1.75V V(L), Silicon, DO-204AA,

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JANTXV1N5304 数据手册

 浏览型号JANTXV1N5304的Datasheet PDF文件第2页浏览型号JANTXV1N5304的Datasheet PDF文件第3页浏览型号JANTXV1N5304的Datasheet PDF文件第4页浏览型号JANTXV1N5304的Datasheet PDF文件第5页浏览型号JANTXV1N5304的Datasheet PDF文件第6页浏览型号JANTXV1N5304的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 24 September 2003.  
MIL-PRF-19500/463F  
24 June 2003  
SUPERSEDING  
MIL-S-19500/463E  
12 October 1997  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR,  
TYPES 1N5283-1 THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.  
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.  
Two levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).  
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:  
a. P = 500 mW (DO-7) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink  
T
L
at  
L = .375 inch (9.53 mm). (Derate to 0 at +175°C).  
b. P = 500 mW (DO-213AB) at T  
= +125°C. (Derate to 0 at +175°C).  
T
EC  
c. -65°C ≤ T ≤ +175°C; -65°C ≤ T  
≤ +175°C.  
j
STG  
1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)  
and as follows, (nominally 0.22 mA dc ≤ I ≤ 4.70 mA dc):  
P
a. R  
b. R  
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).  
ΘJL  
= 100°C/W (maximum) junction to end-caps (DO-213AB).  
ΘJEC  
2. APPLICABLE DOCUMENTS  
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This  
section does not include documents cited in other sections of this specification or recommended for additional  
information or as examples. While every effort has been made to ensure the completeness of this list, document  
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this  
specification, whether or not they are listed.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.  
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...17

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与JANTXV1N5304相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N5304-1 CDI-DIODE

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 		Current Regulator Diode, 1.8mA I(S), 1.75V V(L), Silicon, DO-7, HERMETIC SEALED PACKAGE-2
JANTXV1N5304UR CDI-DIODE

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 		Current Regulator Diode, 1.8mA I(S), 1.75V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAG
JANTXV1N5304UR-1 MICROSEMI

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 		CURRENT REGULATOR DIODES
JANTXV1N5304UR-1 CDI-DIODE

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 		Current Regulator Diode, 1.8mA I(S), 1.75V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAG
JANTXV1N5305 MOTOROLA

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 		2mA, SILICON, CURRENT REGULATOR DIODE, DO-204AA
JANTXV1N5305-1 MICROSEMI

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 		Current Regulator Diode, 2mA I(S), 1.85V V(L), Silicon, DO-35, DO-35, 2 PIN
JANTXV1N5305UR MICROSEMI

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 		Current Regulator Diode, 2mA I(S), 1.85V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-
JANTXV1N5305UR-1 MICROSEMI

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 		CURRENT REGULATOR DIODES
JANTXV1N5305UR-1 CDI-DIODE

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 		Current Regulator Diode, 2mA I(S), 1.85V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-
JANTXV1N5306 CDI-DIODE

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 		Current Regulator Diode, 2.2mA I(S), 1.95V V(L), Silicon, DO-7, HERMETIC SEALED PACKAGE-2

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