5秒后页面跳转
捷配首页

Datasheet > JANTXV1N3647SM
JANTXV1N3647SM PDF预览

JANTXV1N3647SM

更新时间： 2024-02-04 23:00:55
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 292K
描述
Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2

阅读下载

中文翻译

获取价格

JANTXV1N3647SM 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：MELF包装说明：O-LELF-R2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.70
风险等级：5.76其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LELF-R2JESD-609代码：e0
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：0.25 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified参考标准：MIL-19500/279
表面贴装：YES端子面层：TIN LEAD
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JANTXV1N3647SM 数据手册

 浏览型号JANTXV1N3647SM的Datasheet PDF文件第2页浏览型号JANTXV1N3647SM的Datasheet PDF文件第3页 
1N3643 thru 1N3647  
1N4254 thru 1n4257  
1N5181 thru 1N5184  
VOIDLESS-HERMETICALLY-SEALED  
S C O T T S D A L E D I V I S I O N  
HIGH VOLTAGE RECTIFIERS  
DESCRIPTION  
APPEARANCE  
These “standard recovery” high voltage rectifier diode series are military qualified to  
MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru  
1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for  
high-reliability where a failure cannot be tolerated for high voltage applications.  
These 0.10 and 0.25 Amp rated rectifiers at 55ºC for working peak reverse voltages  
from 1000 to 10,000 volts are hermetically sealed with voidless-glass construction  
using an internal “Category I” metallurgical bond. Surface mount MELF package  
configurations are also available by adding “SM” suffix. Microsemi also offers  
numerous other rectifier products to meet higher and lower current ratings with  
various recovery time speed requirements including fast and ultrafast device types  
in both through-hole and surface mount packages.  
S Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
JEDEC registered 1N3643 thru 1N3647, 1N4254  
•
High voltage standard recovery rectifiers 1000 to  
thru 1N4257, and 1N5181 thru 1N5187 series  
10,000 V  
•
•
•
•
•
•
•
Voidless Hermetically Sealed Glass Package  
Triple Layer Passivation  
Internal “Category I” Metallurgical bonds  
Lowest Reverse Leakage Available  
Lowest Thermal Resistance Available  
Absolute High Voltage / High Temperature Stability  
•
•
Military and other high-reliability applications  
Applications include bridges, half-bridges, catch  
diodes, voltage multipliers, X-ray machines,  
power supplies, transmitters, and radar  
equipment  
•
•
•
High forward surge current capability  
Extremely robust construction  
1N5181 thru 1N5184 meet or exceed requirements  
Low thermal resistance  
of MIL-S-19500/389  
•
Inherently radiation hard as described in Microsemi  
•
•
1N3644 thru 1N3647 JAN, JANTX types available  
per MIL-S19500/279  
MicroNote 050  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “SM” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
Average Rectified Forward Current (IO):  
1N3643 thru 1N3647: 0.250 Amps @ TA = 55ºC  
0.150 Amps @ TA = 100ºC  
1N4254 thru 1N4257: 0.250 Amps @ TA = 55ºC  
0.150 Amps @ TA = 100ºC  
1N5181 thru 1N5184: 0.100 Amps @ TA = 55ºC  
0.060 Amps @ TA = 100ºC  
with Tungsten slugs  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 400 mg (approx)  
See package dimensions on last page  
•
•
•
•
•
•
•
•
Forward Surge Current: See Electrical  
Characteristics for surge at 8.3 ms half-sine wave  
Solder Temperatures: 260ºC for 10 s (maximum)  
Copyright 2004  
Microsemi  
Page 1  
12-29-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

下载PDF

与JANTXV1N3647SM相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N3657 MICROSEMI

获取价格

 		Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N3657US MICROSEMI

获取价格

 		Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTXV1N3666-1 MICROSEMI

获取价格

 		Rectifier Diode, 1 Element, 80V V(RRM), Germanium,
JANTXV1N3671A MICROSEMI

获取价格

 		Military Silicon Power Rectifier
JANTXV1N3671R MICROSEMI

获取价格

 		Rectifier Diode, 1 Element, 12A, 800V V(RRM),
JANTXV1N3673A MICROSEMI

获取价格

 		Military Silicon Power Rectifier
JANTXV1N3673AE3 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-203AA, FORMERLY DO-4,
JANTXV1N3673AR MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1
JANTXV1N3766 MICROSEMI

获取价格

 		Military Silicon Power Rectifier
JANTXV1N3766R MICROSEMI

获取价格

 		Military Silicon Power Rectifier

与JANTXV1N3647SM相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证