5秒后页面跳转
JANTX6464 PDF预览

JANTX6464

更新时间: 2024-11-14 05:46:47
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
17页 386K
描述
Transient Suppressor,

JANTX6464 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.84Base Number Matches:1

JANTX6464 数据手册

 浏览型号JANTX6464的Datasheet PDF文件第2页浏览型号JANTX6464的Datasheet PDF文件第3页浏览型号JANTX6464的Datasheet PDF文件第4页浏览型号JANTX6464的Datasheet PDF文件第5页浏览型号JANTX6464的Datasheet PDF文件第6页浏览型号JANTX6464的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 26 November 2011.  
INCH-POUND  
MIL-PRF-19500/551E  
26 August 2011  
SUPERSEDING  
MIL-PRF-19500/551D  
18 October 2010  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR  
TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND  
1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500-watt peak pulse, power, silicon,  
transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as  
specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figures 1, 2, and 3.  
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of the electrical characteristics table  
herein and as follows:  
a.  
P
= 2.5 W (T = room ambient as defined in the general requirements of 4.5 of MIL-STD-750).  
R A  
Derate at 16.7 mW/°C for leaded devices and 50 mW/°C for surface mount devices (see figure 4).  
b.  
c.  
P
= 500 W (see figure 5) at t = 1 ms.  
PR p  
I
= 80 A(pk) at t = 8.33 ms (T = +25°C).  
FSM  
p
A
d. -55°C T +175°C; -55°C T  
op  
+175°C (ambient).  
STG  
1.4 Primary electrical characteristics. Primary electrical characteristic columns 2 and 4 of the electrical  
characteristics herein.  
2. APPLICABLE DOCUMENTS  
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This  
section does not include documents cited in other sections of this specification or recommended for additional  
information or as examples. While every effort has been made to ensure the completeness of this list, document  
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this  
specification, whether or not they are listed.  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at https://assist.daps.dla.mil/.  
AMSC N/A  
FSC 5961  
 
 

与JANTX6464相关器件

型号 品牌 获取价格 描述 数据表
JANTX6465US MICROSEMI

获取价格

Transient Suppressor,
JANTX6637USC MICROSEMI

获取价格

Zener Diode, 5.1V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D58, 2 PI
JANTX6761UR-1 MICROSEMI

获取价格

1 AMP SCHOTTKY BARRIER RECTIFIERS
JANTX6M SEMTECH

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTX704-15K36 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon
JANTX704-15K36T MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon
JANTX8M SEMTECH

获取价格

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXAL175UF-A SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC PACKAGE, 2 PIN
JANTXAL200UF-A SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC PACKAGE, 2 PIN
JANTXAL225UF-A SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC PACKAGE, 2 PIN