Datasheet > JANTX6463

JANTX6463

更新时间： 2024-01-21 03:12:44

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
17页	386K
描述
Transient Suppressor,

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技术参数
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JANTX6463 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.84	Base Number Matches：	1

JANTX6463 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 26 November 2011.

INCH-POUND

MIL-PRF-19500/551E

26 August 2011

SUPERSEDING

MIL-PRF-19500/551D

18 October 2010

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR

TYPES 1N6461 THROUGH 1N6468, 1N6461US THROUGH 1N6468US, AND

1N6461URS THROUGH 1N6468URS, JAN, JANTX, AND JANTXV

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500-watt peak pulse, power, silicon,

transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as

specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1, 2, and 3.

1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of the electrical characteristics table

herein and as follows:

= 2.5 W (T = room ambient as defined in the general requirements of 4.5 of MIL-STD-750).

R A

Derate at 16.7 mW/°C for leaded devices and 50 mW/°C for surface mount devices (see figure 4).

= 500 W (see figure 5) at t = 1 ms.

PR p

= 80 A(pk) at t = 8.33 ms (T = +25°C).

FSM

d. -55°C ≤ T ≤ +175°C; -55°C ≤ T

≤ +175°C (ambient).

STG

1.4 Primary electrical characteristics. Primary electrical characteristic columns 2 and 4 of the electrical

characteristics herein.

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at https://assist.daps.dla.mil/.

AMSC N/A

FSC 5961

12 3 4 5 6 7...17

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与JANTX6463相关器件

型号	品牌	获取价格	描述	数据表
JANTX6464	MICROSEMI	获取价格	Transient Suppressor,
JANTX6465US	MICROSEMI	获取价格	Transient Suppressor,
JANTX6637USC	MICROSEMI	获取价格	Zener Diode, 5.1V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D58, 2 PI
JANTX6761UR-1	MICROSEMI	获取价格	1 AMP SCHOTTKY BARRIER RECTIFIERS
JANTX6M	SEMTECH	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTX704-15K36	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon
JANTX704-15K36T	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon
JANTX8M	SEMTECH	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXAL175UF-A	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC PACKAGE, 2 PIN
JANTXAL200UF-A	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC PACKAGE, 2 PIN

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