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JANTX2N7237D

更新时间： 2024-02-18 12:23:36
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 192K
描述
Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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中文翻译

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JANTX2N7237D 技术参数

是否Rohs认证：不符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.19Is Samacsys：N
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：500 mJ
外壳连接：DRAIN配置：SINGLE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：11 A
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.52 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-267AB
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：125 W
最大脉冲漏极电流 (IDM)：44 A认证状态：Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANTX2N7237D 数据手册

 浏览型号JANTX2N7237D的Datasheet PDF文件第2页浏览型号JANTX2N7237D的Datasheet PDF文件第3页浏览型号JANTX2N7237D的Datasheet PDF文件第4页浏览型号JANTX2N7237D的Datasheet PDF文件第5页浏览型号JANTX2N7237D的Datasheet PDF文件第6页浏览型号JANTX2N7237D的Datasheet PDF文件第7页 
PD - 90497F  
IRFM9240  
JANTX2N7237  
JANTXV2N7237  
JANS2N7237  
REF:MIL-PRF-19500/595  
200V, P-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
Product Summary  
HEXFET® MOSFETTECHNOLOGY  
Part Number RDS(on)  
ID  
IRFM9240 0.51Ω -11A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state resis-  
tance combined with high transconductance. HEXFET tran-  
sistors also feature all of the well-established advantages  
of MOSFETs, such as voltage control, very fast switching,  
ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-11  
-7.0  
D
D
GS  
GS  
C
A
I
= -10V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
-44  
DM  
@ T = 25°C  
P
D
125  
W
W/°C  
V
C
Linear Derating Factor  
1.0  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
-11  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
12.5  
-5.0  
mJ  
V/ns  
AR  
dv/dt  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
11/18/02  
1234567

中文翻译

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与JANTX2N7237D相关器件

型号 品牌 获取价格 描述 数据表
JANTX2N7237U INFINEON

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 		-200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7237U with Hermetic Pac
JANTX2N7323D RENESAS

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 		23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE
JANTX2N7323H RENESAS

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 		23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE
JANTX2N7324D RENESAS

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 		Power Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta
JANTX2N7324R RENESAS

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 		16A, 200V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL PACKAGE-
JANTX2N7325H RENESAS

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 		Power Field-Effect Transistor, 14A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Me
JANTX2N7325R RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254AA, 3 PIN
JANTX2N7328D RENESAS

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 		40A, 100V, 0.085ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE, 2 PIN
JANTX2N7329H RENESAS

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 		30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, HERMETIC SEALED, METAL PACKAG
JANTX2N7329R RENESAS

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 		30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA, HERMETIC SEALED, METAL PACKAG

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