Datasheet > JANTX2N7225U

JANTX2N7225U

更新时间： 2023-12-06 20:12:26

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	155K
描述
200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7225U with Hermetic Packaging

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JANTX2N7225U 数据手册

PD - 91549C

IRFN250

JANTX2N7225U

JANTXV2N7225U

POWER MOSFET

SURFACE MOUNT(SMD-1)

REF:MIL-PRF-19500/592

200V, N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFN250

0.100 Ω

27.4A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

SMD-1

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Surface Mount

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

27.4

= 10V, T = 100°C Continuous Drain Current

110

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

±20

500

27.4

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

5.0

-55 to 150

Storage Temperature Range

Package Mounting Surface Temperature

Weight

^oC

STG

300(for 5 seconds)

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

1/28/01

12 3 4 5 6 7

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