是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BCY | 包装说明: | FORMERLY TO-39, 3 PIN |
针数: | 2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.91 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 1.5 A |
最大漏极电流 (ID): | 0.98 A | 最大漏源导通电阻: | 3.65 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 8.33 W |
认证状态: | Not Qualified | 参考标准: | MIL-19500/570B |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6904 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA |
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JANTX2N690E3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, SCR |
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JANTX2N691E3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, SCR |
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JANTX2N692E3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, SCR |
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JANTX2N6967 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,13A I(D),TO-213AA |
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JANTX2N6968 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,7.5A I(D),TO-213AA |
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JANTX2N6987 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 4-Element, PNP, Silicon, TO-116, |
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JANTX2N6987 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, |
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JANTX2N6987U | ETC |
获取价格 |
TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | LLCC |
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JANTX2N6988 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 4-Element, PNP, Silicon, TO-86, |
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