Datasheet > JANTX2N6896

JANTX2N6896

更新时间： 2024-11-04 00:00:03

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页数	文件大小	规格书
24页	138K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-204AA

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JANTX2N6896 数据手册

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be

slightly different in format due To electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 21 August 1999

INCH-POUND

MIL-PRF-19500/565B

21 May 1999

SUPERSEDING

MIL-S-19500/565A

7 October 1987

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,

SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898

JAN, JANTX, JANTXV AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897; and

TO-204AE for 2N6898 (formerly TO – 3).

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Type

T and

= +25°C

T = +100°C

STG

V dc

100

V dc

100

V dc

±20

A dc

A(pk)

°C

-55 to +150

2N6895

2N6896

2N6897

2N6898

8.33

100

150

0.6

1.16

6.0

0.74

3.8

7.6

1.16

6.0

15.8

1/ Derate linearly T > +25°C – 2N6895 (0.067 W/°C), 2N6896 (0.48 W/°C), 2N6897 (0.8 W/°C), 2N6898 (1.2 W/°C).

P(rated)

2/ Derate above T = +25 °C according to the formula

I_D

where P(rated) = P – (T = -25) (W/°C) watts;

K = max r

DS(on)

at T =+150°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...24

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与JANTX2N6896相关器件

型号	品牌	获取价格	描述	数据表
JANTX2N6898	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-204AE
JANTX2N690	MICROSEMI	获取价格	Manufacture Diodes, IGBTs, LED Driver, Small Signal & Analog, RF Power, SCR, WL
JANTX2N6901	RENESAS	获取价格	1690mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
JANTX2N6902	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 12A I(D) \| TO-204AA
JANTX2N6903	RENESAS	获取价格	980mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF, FORMERLY TO-39, 3 PIN
JANTX2N6904	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-204AA
JANTX2N690E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, SCR
JANTX2N691E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, SCR
JANTX2N692E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, SCR
JANTX2N6967	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,13A I(D),TO-213AA

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