生命周期: | Transferred | 包装说明: | TO-39, 3 PIN |
Reach Compliance Code: | compliant | HTS代码: | 8541.30.00.80 |
风险等级: | 5.67 | 外壳连接: | ANODE |
配置: | SINGLE | 最大直流栅极触发电流: | 0.2 mA |
JEDEC-95代码: | TO-205AD | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 最低工作温度: | -65 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 认证状态: | Qualified |
最大均方根通态电流: | 2.512 A | 参考标准: | MIL-19500 |
断态重复峰值电压: | 400 V | 重复峰值反向电压: | 500 V |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JANTX2N2329S | MICROSEMI | SILICON CONTROLLED RECTIFIER |
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JANTX2N2369A | RAYTHEON | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18, |
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JANTX2N2369AU | ETC | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | LLCC |
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JANTX2N2369AUA | ETC | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | LLCC |
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JANTX2N2369AUB | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | LLCC |
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JANTX2N2432 | MICROSEMI | Small Signal Bipolar Transistor, 0.1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, |
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