Datasheet > JANTX1N972D-1

JANTX1N972D-1

更新时间： 2024-11-07 20:37:35

品牌	Logo	应用领域
CDI-DIODE		测试二极管
页数	文件大小	规格书
28页	208K
描述
Zener Diode, 30V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH,

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JANTX1N972D-1 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.7	Is Samacsys：	N
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-204AH
JESD-30 代码：	O-LALF-W2	湿度敏感等级：	1
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	0.48 W
认证状态：	Not Qualified	标称参考电压：	30 V
表面贴装：	NO	技术：	ZENER
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	1%
工作测试电流：	4.2 mA	Base Number Matches：	1

JANTX1N972D-1 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 6 January 2006.

INCH-POUND

MIL-PRF-19500/117N

6 October 2005

SUPERSEDING

MIL-PRF-19500/117M

13 January 2004

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH

1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1

THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC

JANS level (see 6.4).

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall

consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator

diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided

for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for

each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and

as follows:

a. P_TL= 500 mW, (DO-35) at T_L= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

at L = .375 inch (9.53 mm). Derate I_Zto 0.0 mA dc at +175°C.

b. P_TEC= 500 mW, (DO-213AA) at T_EC= +125°C, derate to 0 at +175°C. -65°C ≤ T_J≤ +175°C; -65°C ≤ T_STG

+175°C.

≤

c. P_T(PCB)= 500 mW, T_A= 75°C.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the ASSIST

Online database at http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...28

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与JANTX1N972D-1相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N972DUR-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTX1N972UR-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTX1N973	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTX1N973-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTX1N973A	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTX1N973A-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTX1N973AUR-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTX1N973B	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTX1N973B-1	MICROSEMI	获取价格	METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
JANTX1N973BUR-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes

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