Datasheet > JANTX1N6620US/TR

JANTX1N6620US/TR

更新时间： 2024-12-02 03:56:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	337K
描述
Rectifier Diode,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANTX1N6620US/TR 数据手册

1N6620US thru 1N6625US

VOIDLESS-HERMETICALLYSEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/585 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in axial-leaded packages for thru-hole mounting (see separate

data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including standard, fast and ultrafast device types in both through-hole

and surface mount packages.

Package “A”

or D-5A

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount series equivalent to the JEDEC

registered 1N6620 to 1N6625 series

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

•

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

•

Internal “Category I” Metallurgical bonds

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/585

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefix, e.g.

SP6620US, SP6624US, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Axial-leaded equivalents also available (see separate

data sheet for 1N6620 thru 1N6625)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Junction Temperature: -65^oC to +150^oC

• Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

• Peak Forward Surge Current @ 25^oC: 20 Amps (except

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead plating.

1N6625 which is 15 Amps)

Note: Test pulse = 8.3 ms, half-sine wave.

• Average Rectified Forward Current (I_O) at T_EC=+110^oC:

1N6620 thru 1N6622: 2.0 Amps

•

MARKING: Cathode band only

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 193 mg

1N6623 thru 1N6625: 1.5 Amps

(Derate linearly at 1.5%/^oC for T_EC> +110^oC)

• Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6620 thru 1N6622: 1.2 Amps

See package dimensions and recommended pad

layout on last page

1N6623 thru 1N6625: 1.0 Amp

(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_O

rating is typical for PC boards where thermal resistance

from mounting point to ambient is sufficiently controlled

where T_J(max)is not exceeded.)

• Thermal Resistance junction to endcap (R_θJEC): 13^oC/W

• Capacitance at V_R= 10 V: 10 pF

• Solder temperature: 260^oC for 10 s (maximum)

10-06-2009 REV E; SD52A.pdf

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与JANTX1N6620US/TR相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N6621	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon, HERMETIC, 106, 2 PIN
JANTX1N6621	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon, DO-41, HERMETI
JANTX1N6621U	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon, HERMETIC, MELF-A, 2 PIN
JANTX1N6621U	SENSITRON	获取价格	DESCRIPTION: 400 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6621US	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon, HERMETIC SEALE
JANTX1N6621US	SENSITRON	获取价格	DESCRIPTION: 400 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6622	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, DO-41, HERMETI
JANTX1N6622	SENSITRON	获取价格	DESCRIPTION: 600 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANTX1N6622U	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, HERMETIC, MELF-A, 2 PIN
JANTX1N6622U	SENSITRON	获取价格	DESCRIPTION: 600 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.

与JANTX1N6620US/TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTX1N6620US/TR

JANTX1N6620US/TR 数据手册

与JANTX1N6620US/TR相关器件

与JANTX1N6620US/TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTX1N6620US/TR

JANTX1N6620US/TR 数据手册

与JANTX1N6620US/TR相关器件

与JANTX1N6620US/TR相关文章

您还可以找

您在本页遇到什么问题？