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JANTX1N6122AUS PDF预览

JANTX1N6122AUS

更新时间: 2024-11-04 12:59:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管
页数 文件大小 规格书
2页 110K
描述
Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, MICRO MINIATURE, GLASS, MELF-2

JANTX1N6122AUS 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-MELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.43最小击穿电压:44.7 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-MELF-R2JESD-609代码:e0
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:5 W认证状态:Qualified
参考标准:MIL-19500/516表面贴装:YES
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTX1N6122AUS 数据手册

 浏览型号JANTX1N6122AUS的Datasheet PDF文件第2页 

JANTX1N6122AUS 替代型号

型号 品牌 替代类型 描述 数据表
1N6122AUS MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon, HER

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