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JANTX1N5811CBUS PDF预览

JANTX1N5811CBUS

更新时间： 2023-02-26 15:58:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 超快恢复二极管快速恢复二极管
页数 文件大小 规格书
30页 374K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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中文翻译

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JANTX1N5811CBUS 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：O-LELF-R2
针数：2Reach Compliance Code：not_compliant
HTS代码：8541.10.00.80风险等级：5.91
其他特性：HIGH RELIABILITY应用：ULTRA FAST RECOVERY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LELF-R2JESD-609代码：e0
最大非重复峰值正向电流：125 A元件数量：1
相数：1端子数量：2
最大输出电流：3 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
参考标准：MIL-19500/742最大重复峰值反向电压：150 V
最大反向恢复时间：0.03 µs表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED

JANTX1N5811CBUS 数据手册

 浏览型号JANTX1N5811CBUS的Datasheet PDF文件第2页浏览型号JANTX1N5811CBUS的Datasheet PDF文件第3页浏览型号JANTX1N5811CBUS的Datasheet PDF文件第4页浏览型号JANTX1N5811CBUS的Datasheet PDF文件第5页浏览型号JANTX1N5811CBUS的Datasheet PDF文件第6页浏览型号JANTX1N5811CBUS的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 28 November 2009.  
INCH-POUND  
MIL-PRF-19500/742A  
28 August 2009  
SUPERSEDING  
MIL-PRF-19500/742  
1 June 2007  
PERFORMANCE SPECIFICATION SHEET  
* SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,  
TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB,  
1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS,  
JAN, JANTX, AND JANTXV  
* Inactive for new design after 28 September 2009. For new design use -  
1N5802, 1N5804, 1N5806, 1N5807, 1N5809, AND 1N5811, 1N5802US,  
1N5804US, 1N5806US, 1N5807US, 1N5809US, AND 1N5811US on MIL-PRF-  
19500/477.  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon, fast recovery, power rectifier  
diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug diodes utilizing  
category 3 metallurgical bonding) device types as specified in MIL-PRF-19500. This category 3 metallurgical  
bonding is also known as compression bonds (CB).  
* 1.2 Physical dimensions. See figures 1(similar to a DO-7) and 2 (square end-cap surface mount).  
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.  
1.3.1 Ratings applicable to all Part or Identifying Numbers (PIN). TSTG = TJ(max) = -65°C to +175°C.  
1.3.2 Ratings applicable to individual types.  
Col. 1  
Col. 2  
VRWM  
Col. 3  
IO(L)  
TL = +75°C  
L = .25 in.  
(6.35 mm)  
(2) (3)  
Col. 4  
IO1  
TA =  
+55°C  
(4) (5) (6)  
Col. 5  
Col. 6  
trr  
Col. 7  
Col. 8  
Col. 9  
IFSM at  
+25°C  
operating at  
RθJL  
at  
L = .375 in.  
(9.52 mm)  
Types  
(1)  
RθJEC  
(7)  
R
θJX  
(6)  
IO1  
tp = 8.3 ms  
A(pk)  
A
A
ns  
°C/W  
36  
36  
36  
22  
°C/W  
13  
13  
°C/W  
154  
154  
154  
52  
1N5802CB, CBUS  
1N5804CB, CBUS  
1N5806CB, CBUS  
1N5807CB, CBUS  
1N5809CB, CBUS  
1N5811CB, CBUS  
50  
2.5  
2.5  
2.5  
6.0  
6.0  
6.0  
1.0  
1.0  
1.0  
3.0  
3.0  
3.0  
35  
35  
35  
125  
125  
125  
25  
25  
25  
30  
30  
30  
100  
150  
50  
100  
150  
13  
6.5  
6.5  
6.5  
22  
22  
52  
52  
See notes on next page.  
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://assist.daps.dla.mil.  
AMSC N/A  
FSC 5961  
1234567...30

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