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JANTX1N4938UR-1 PDF预览

JANTX1N4938UR-1

更新时间： 2024-09-09 07:32:35
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美高森美 - MICROSEMI /
页数 文件大小 规格书
17页 199K
描述
Rectifier Diode, 1 Element, 0.1A, Silicon, DO-213AA, DO-213AA, 2 PIN

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JANTX1N4938UR-1 数据手册

 浏览型号JANTX1N4938UR-1的Datasheet PDF文件第2页浏览型号JANTX1N4938UR-1的Datasheet PDF文件第3页浏览型号JANTX1N4938UR-1的Datasheet PDF文件第4页浏览型号JANTX1N4938UR-1的Datasheet PDF文件第5页浏览型号JANTX1N4938UR-1的Datasheet PDF文件第6页浏览型号JANTX1N4938UR-1的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 4 February 2010.  
INCH-POUND  
MIL-PRF-19500/169N  
2 NOVEMBER 2009  
SUPERSEDING  
MIL-PRF-19500/169M  
10 APRIL 2008  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,TYPES 1N3070, 1N3070-1,  
1N3070UR-1, 1N4938, 1N4938-1, 1N4938UR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC  
Device types 1N3070, 1N3070-1, 1N3070UR-1, and 1N4938 are inactive for new design (see 6.4).  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein  
shall consist of this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon, switching diodes. Three levels of  
product assurance are provided for each device type and two product assurance levels are provided for die, as  
specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figures 1 (DO-35), 2 (DO-7), 3 (DO-213AA), 4 and 5 (die).  
1.3 Maximum ratings. T = +25°C, unless otherwise specified.  
A
V
BR  
V
RWM  
I
I
I
T
R
R
ΘJEC  
(2)  
R
O(PCB)  
= 75°C (1)  
FSM1  
t = 1s  
FSM2  
t = 1µs  
STG  
ΘJL  
ΘJA(PCB)  
(2) (3)  
and T  
L = .375 inch  
(9.53 mm) (2)  
T
p
J
A
p
V dc  
200  
V (pk)  
175  
mA  
mA (pk) A (pk)  
500  
°C  
°C/W  
°C/W  
°C/W  
100  
2
-65 to +175  
250  
100  
325  
(1) For temperature-current derating curves, see figure 6.  
(2) See figures 7 and 8 for thermal impedance curves.  
(3) T = +75°C for both axial and metal electrode leadless face diodes (MELF) (UR) on printed circuit board  
A
(PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR) = .061 inch  
(1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm)  
x 1 inch (25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); R  
ΘJA  
with a defined PCB thermal  
resistance condition included is measured at I = 200 mA dc.  
O
1.4 Primary electrical characteristics. T = +25°C, unless otherwise indicated.  
A
V
I
at  
t
rr  
F1  
R1  
I
= 100mA dc  
V
R
= 175 V dc  
F
V dc  
1.0  
ns  
50  
µA dc  
0.1  
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://assist.daps.dla.mil .  
AMSC N/A  
FSC 5961  
1234567...17

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JANTX1N4938UR-1 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV1N4938UR-1 MICROSEMI

类似代替

 Rectifier Diode, 1 Element, 0.1A, Silicon, DO-213AA, DO-213AA, 2 PIN
1N4938UR-1 MICROSEMI

类似代替

 SWITCHING DIODE
1N4938 FAIRCHILD

功能相似

 Small Signal Diode

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