5秒后页面跳转
JANTX1N3613EG1 PDF预览

JANTX1N3613EG1

更新时间: 2024-11-11 03:17:19
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 66K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL,

JANTX1N3613EG1 数据手册

 浏览型号JANTX1N3613EG1的Datasheet PDF文件第2页 
JAN and JANTX 1N3611EG1 thru 1N3614EG1 and 1N3957EG1  
Patented*  
Vishay Semiconductors  
formerly  
Glass Passivated Rectifiers  
Reverse Voltage 200 to 1000V  
Forward Current 1.0A  
DO-204AL (EG1)  
1.0 (25.4)  
MIN.  
Features  
Qualified to MIL-PRF-19500/228  
Class 1 high temperature metallurgically bonded  
construction brazed > 600°C  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
1.0 ampere operation at TA = 55°C with no thermal runaway  
Typical IR less than 0.1µA  
Cavity-free, glass passivated junction. In epoxy over  
hermetic glass  
Dimensions  
in inches and  
(millimeters)  
0.205 (5.2)  
0.160 (4.1)  
High temperature soldering guaranteed: 350°C/10 seconds,  
0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension  
®
Mechanical Data  
1.0 (25.4)  
MIN.  
Case: DO-204AL, molded epoxy over glass body (EG1)  
Terminals: Solder plated axial leads, solderable per  
MIL-STD-750, Method 2026  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any Weight: 0.015oz., 0.4g  
Flammability: Epoxy is rated UL 94V-0.  
* Glass-plastic encapsulation technique is covered by Patent No. 3,996,602  
and brazed-lead assembly by Patent No. 3,930,306  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level  
Parameter  
Symbol  
Unit  
J,JX 1N3611 J,JX 1N3612 J,JX 1N3613 J,JX 1N3614 J,JX 1N3957  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current  
0.375(9.5mm) lead length at TA = 55°C  
IF(AV)  
1.0  
A
Peak forward surge current 10 surges of 8.3ms each at  
1 min. intervals super-imposed on IO = 750mA DC;  
VR = rated VRRM TA = 100°C (per MIL-STD-750 m 4066)  
IFSM  
30  
A
RθJL  
RθJA  
38  
45  
Typical thermal resistance(1)  
°C/W  
Operating junction and storage temperature range  
Barometric Pressure  
TJ, TSTG  
Hg  
65 to +175  
°C  
8
54  
87  
mm  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Minimum reverse breakdown voltage at 50µA  
VBR  
220  
440  
660  
880  
1100  
V
V
Maximum instantaneous  
at 1.0A, TA = 25°C  
at 3.0A, TA = 25°C  
at 1.0A, TA = 65°C  
1.1  
1.3  
1.5  
forward voltage Tp = 300µs  
VF  
Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25°C  
1
IR  
trr  
µA  
µs  
pF  
TA = 150°C  
300  
Typical reverse recovery time at  
IF = 0.5A, IR = 1.0A, Irr = 0.25A  
2.0  
8.0  
Typical junction capacitance at 4V, 1MHz  
CJ  
Notes: (1) Thermal resistance from junction to ambient at 0.375(9.5mm) lead length, P.C.B. mounted  
Document Number 88652  
6-Mar-02  
www.vishay.com  
1

与JANTX1N3613EG1相关器件

型号 品牌 获取价格 描述 数据表
JANTX1N3613UR MICROSEMI

获取价格

暂无描述
JANTX1N3613US MICROSEMI

获取价格

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTX1N3614 MICROSEMI

获取价格

MILITARY RECTIFIERS
JANTX1N3614UR MICROSEMI

获取价格

暂无描述
JANTX1N3614US MICROSEMI

获取价格

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTX1N3644 MICROSEMI

获取价格

HIGH VOLTAGE RECTIFIERS
JANTX1N3644SM MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTX1N3645 MICROSEMI

获取价格

HIGH VOLTAGE RECTIFIERS
JANTX1N3645SM MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTX1N3646 MICROSEMI

获取价格

HIGH VOLTAGE RECTIFIERS