Datasheet > JANTX1N3613EG1

JANTX1N3613EG1

更新时间： 2024-09-21 03:17:19

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
2页	66K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AL,

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JANTX1N3613EG1 数据手册

JAN and JANTX 1N3611EG1 thru 1N3614EG1 and 1N3957EG1

Patented*

Vishay Semiconductors

formerly

Glass Passivated Rectifiers

Reverse Voltage 200 to 1000V

Forward Current 1.0A

DO-204AL (EG1)

1.0 (25.4)

MIN.

Features

• Qualified to MIL-PRF-19500/228

• Class 1 high temperature metallurgically bonded

construction brazed > 600°C

0.107 (2.7)

0.080 (2.0)

DIA.

• 1.0 ampere operation at T_A= 55°C with no thermal runaway

• Typical I_Rless than 0.1µA

• Cavity-free, glass passivated junction. In epoxy over

hermetic glass

Dimensions

in inches and

(millimeters)

0.205 (5.2)

0.160 (4.1)

• High temperature soldering guaranteed: 350°C/10 seconds,

0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension

Mechanical Data

1.0 (25.4)

MIN.

Case: DO-204AL, molded epoxy over glass body (EG1)

Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

0.034 (0.86)

0.028 (0.71)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any Weight: 0.015oz., 0.4g

Flammability: Epoxy is rated UL 94V-0.

* Glass-plastic encapsulation technique is covered by Patent No. 3,996,602

and brazed-lead assembly by Patent No. 3,930,306

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level

Parameter

Symbol

Unit

J,JX 1N3611 J,JX 1N3612 J,JX 1N3613 J,JX 1N3614 J,JX 1N3957

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

1000

Maximum average forward rectified current

0.375” (9.5mm) lead length at T_A= 55°C

I_F(AV)

1.0

Peak forward surge current 10 surges of 8.3ms each at

1 min. intervals super-imposed on I_O= 750mA DC;

V_R= rated V_RRMT_A= 100°C (per MIL-STD-750 m 4066)

I_FSM

R_θJL

R_θJA

Typical thermal resistance⁽¹⁾

°C/W

Operating junction and storage temperature range

Barometric Pressure

T_J, T_STG

–65 to +175

°C

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Minimum reverse breakdown voltage at 50µA

V_BR

220

440

660

880

1100

Maximum instantaneous

at 1.0A, T_A= 25°C

at 3.0A, T_A= 25°C

at 1.0A, T_A= –65°C

1.1

1.3

1.5

forward voltage Tp = 300µs

V_F

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25°C

I_R

t_rr

µA

µs

T_A= 150°C

300

Typical reverse recovery time at

I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A

2.0

8.0

Typical junction capacitance at 4V, 1MHz

C_J

Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

Document Number 88652

6-Mar-02

www.vishay.com

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与JANTX1N3613EG1相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N3613UR	MICROSEMI	获取价格	暂无描述
JANTX1N3613US	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTX1N3614	MICROSEMI	获取价格	MILITARY RECTIFIERS
JANTX1N3614UR	MICROSEMI	获取价格	暂无描述
JANTX1N3614US	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTX1N3644	MICROSEMI	获取价格	HIGH VOLTAGE RECTIFIERS
JANTX1N3644SM	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTX1N3645	MICROSEMI	获取价格	HIGH VOLTAGE RECTIFIERS
JANTX1N3645SM	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTX1N3646	MICROSEMI	获取价格	HIGH VOLTAGE RECTIFIERS

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