Datasheet > JANSR2N7278

JANSR2N7278

更新时间： 2024-09-22 22:24:47

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	43K
描述
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET

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JANSR2N7278 数据手册

JANSR2N7278

Formerly FRL234R4

June 1998

4A, 250V, 0.700 Ohm, Rad Hard,

N-Channel Power MOSFET

Features

Description

• 4A, 250V, r

= 0.700Ω

The Intersil Corporation has designed a series of SECOND

GENERATION hardened power MOSFETs of both N-Chan-

nel and P-Channel enhancement types with ratings from

100V to 500V, 1A to 60A, and on resistance as low as

25mΩ. Total dose hardness is offered at 100K RAD (Si) and

1000K RAD (Si) with neutron hardness ranging from 1E13

for 500V product to 1E14 for 100V product. Dose rate hard-

DS(ON)

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

DSS

ness (GAMMA DOT) exists for rates to 1E9 without current

limiting and 2E12 with current limiting.

• Photo Current

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to exhibit mini-

mal characteristic changes to total dose (GAMMA) and

neutron (no) exposures. Design and processing efforts are

also directed to enhance survival to dose rate (GAMMA

DOT) exposure.

- 4nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Also available at other radiation and screening levels. See us

Ordering Information

the

web,

Intersil’s

home

page:

http://www.semi.harris.com. Contact your local Intersil

Sales Ofﬁce for additional information.

PART NUMBER

PACKAGE

TO-205AF

BRAND

JANSR2N7278

Symbol

Die family TA17633.

MIL-PRF-19500/604.

Packaging

TO-205AF

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4295.1

2-13

12 3 4 5 6 7

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