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JANSR2N7278 PDF预览

JANSR2N7278

更新时间： 2024-09-23 20:18:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
8页 81K
描述
Power Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3

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中文翻译

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JANSR2N7278 技术参数

生命周期：Transferred零件包装代码：BCY
包装说明：CYLINDRICAL, O-MBCY-W3针数：4
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.38Is Samacsys：N
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (ID)：4 A最大漏源导通电阻：0.7 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-205AF
JESD-30 代码：O-MBCY-W3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：ROUND
封装形式：CYLINDRICAL极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：12 A认证状态：Not Qualified
参考标准：MIL-19500/604表面贴装：NO
端子形式：WIRE端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANSR2N7278 数据手册

 浏览型号JANSR2N7278的Datasheet PDF文件第2页浏览型号JANSR2N7278的Datasheet PDF文件第3页浏览型号JANSR2N7278的Datasheet PDF文件第4页浏览型号JANSR2N7278的Datasheet PDF文件第5页浏览型号JANSR2N7278的Datasheet PDF文件第6页浏览型号JANSR2N7278的Datasheet PDF文件第7页 
JANSR2N7278  
Formerly FRL234R4  
June 1998  
4A, 250V, 0.700 Ohm, Rad Hard,  
N-Channel Power MOSFET  
Features  
Description  
[ /Title  
(JANS  
R2N72  
78)  
/Sub-  
ject  
• 4A, 250V, r  
= 0.700Ω  
The Intersil Corporation has designed a series of SECOND  
GENERATION hardened power MOSFETs of both N-Chan-  
nel and P-Channel enhancement types with ratings from  
100V to 500V, 1A to 60A, and on resistance as low as  
25mΩ. Total dose hardness is offered at 100K RAD (Si) and  
1000K RAD (Si) with neutron hardness ranging from 1E13  
for 500V product to 1E14 for 100V product. Dose rate hard-  
DS(ON)  
• Total Dose  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
- Typically Survives 2E12 if Current Limited to I  
DSS  
DM  
(4A,  
ness (GAMMA DOT) exists for rates to 1E9 without current  
limiting and 2E12 with current limiting.  
250V,  
0.700  
Ohm,  
Rad  
Hard,  
N-  
• Photo Current  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS) struc-  
ture. It is specially designed and processed to exhibit mini-  
mal characteristic changes to total dose (GAMMA) and  
neutron (no) exposures. Design and processing efforts are  
also directed to enhance survival to dose rate (GAMMA  
DOT) exposure.  
- 4nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Chan-  
nel  
Also available at other radiation and screening levels. See us  
on the web, Intersil’s home page: http://www.intersil.com.  
Contact your local Intersil Sales Office for additional  
information.  
Ordering Information  
Power  
MOS-  
FET)  
/Autho  
r ()  
/Key-  
words  
(Inter-  
sil  
PART NUMBER  
PACKAGE  
BRAND  
JANSR2N7278  
JANSR2N7278  
TO-205AF  
Symbol  
Die family TA17633.  
MIL-PRF-19500/604.  
D
G
Corpo-  
ration,  
Semi-  
con-  
S
Packaging  
TO-205AF  
ductor,  
4A,  
250V,  
0.700  
Ohm,  
Rad  
G
D
S
Hard,  
N-  
Chan-  
nel  
Power  
©2001 Fairchild Semiconductor Corporation  
JANSR2N7278 Rev. A  
12345678

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JANSR2N7381 INFINEON

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JANSR2N7389 INFINEON

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