Datasheet > 晶体管 > 功率场效应晶体管> JANSR2N7268D

JANSR2N7268D

更新时间： 2024-09-23 13:08:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
12页	443K
描述
Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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JANSR2N7268D 数据手册

PD - 90675C

IRHM7150

JANSR2N7268

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

HEXFET TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7150

IRHM3150

IRHM4150

IRHM8150

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.065Ω

34A JANSR2N7268

34A JANSF2N7268

34A JANSG2N7268

34A JANSH2N7268

1000K Rads (Si) 0.065Ω

TO-254AA

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

136

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

W/°C

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

9.3 (Typical)

For footnotes refer to the last page

www.irf.com

8/14/01

12 3 4 5 6 7...12

中文翻译

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与JANSR2N7268D相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7268U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSR2N7269	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
JANSR2N7269D	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
JANSR2N7269U	INFINEON	获取价格	Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si)
JANSR2N7270	INFINEON	获取价格	Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 100 kr
JANSR2N7270D	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
JANSR2N7270U	INFINEON	获取价格	Rad hard, 500V, 11A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si)
JANSR2N7272	INTERSIL	获取价格	8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7275	INTERSIL	获取价格	5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7278	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 250V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal

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