Datasheet > JANSR2N72610U

JANSR2N72610U

更新时间： 2024-09-23 15:35:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	438K
描述
8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18

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JANSR2N72610U 数据手册

RAD

Hard

HEXFE

T^®

TECHNOLOGY

Absolute Maximum Ratings

Parameter

PD - 91806B

IRHE7130

JANSR2N7261U

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFCACE MOUNT(LCC-18)

REF: MIL-PRF-19500/601

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHE7130

IRHE3130

IRHE4130

IRHE8130

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.18Ω

8.0A JANSR2N7261U

8.0A JANSF2N7261U

8.0A JANSG2N7261U

8.0A JANSH2N7261U

1000K Rads (Si) 0.18Ω

LCC-18

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

8.0

5.0

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.20

±20

130

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

Package Mounting Surface Temperature

Weight

300 ( for 5s)

0.42 (Typical )

For footnotes refer to the last page

www.irf.com

7/3/01

12 3 4 5 6 7...12

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与JANSR2N72610U相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7261U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
JANSR2N7262	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR
JANSR2N7262U	INFINEON	获取价格	Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC,
JANSR2N7268	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
JANSR2N7268D	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Me
JANSR2N7268U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSR2N7269	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
JANSR2N7269D	INFINEON	获取价格	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
JANSR2N7269U	INFINEON	获取价格	Rad hard, 200V, 26A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si)
JANSR2N7270	INFINEON	获取价格	Rad hard, 500V, 11A, single, N-channel MOSFET, R5 in a TO-254AA package - TO-254AA, 100 kr

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