Datasheet > 晶体管 > 小信号双极晶体管> JANSR2N5401UBG

JANSR2N5401UBG

更新时间： 2024-10-15 17:33:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
10页	222K
描述
高可靠性PNP双极性晶体管150 V、0.5 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N5401UBG 数据手册

2N5401HR

Hi-Rel PNP bipolar transistor 150 V, 0.5 A

Datasheet — production data

Features

BV_CEO

150 V

I_C(max)

0.5 A

> 60

_FEat 10 V - 150 mA

Operating temperature range

-65°C to +200°C

TO-18

LCC-3

■ Hi-Rel PNP bipolar transistor

■ Linear gain characteristics

■ ESCC qualified

LCC-3UB

■ European preferred part list - EPPL

■ 100 krad low dose rate

Figure 1.

Internal schematic diagram

■ Radiation level: lot specific total dose contact

marketing for specified level

Description

The 2N5401HR is a silicon planar epitaxial PNP

transistor available in TO-18 and LCC-3

packages. It is specifically designed for

aerospace Hi-Rel applications and ESCC

qualified according to the 5202-014 specification.

In case of conflict between this datasheet and

ESCC detailed specification, the latter prevails.

Table 1.

Device summary

Order codes

ESCC part num. Quality level Rad level Packages

Lead finish

Mass (g) EPPL

2N5401UB1

2N5401SW

2N5401UB06

2N5401UB07

SOC5401

Eng. Model

LCC-3UB

LCC-3

Gold

Solder Dip

Gold

0.06

0.40

5202/014/05

5202/014/06

5202/014/07

ESCC Flight 100 krad

ESCC Flight

LCC-3UB

LCC-3

ESCC Flight

Solder Dip

Eng. Model

Gold

SOC5401HRB 5202/014/04 or 05 ESCC Flight

LCC-3

Gold/Solder Dip⁽¹⁾

Gold

2N5401/T1

2N5401HR

Eng. Model

TO-18

5202/014/01 or 02 ESCC Flight

TO-18

Gold/Solder Dip ⁽¹⁾

1. Depending ESCC part number mentioned on the purchase order.

October 2012

Doc ID 16934 Rev 3

1/10

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...10

中文翻译

下载PDF

与JANSR2N5401UBG相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N5401UBT	STMICROELECTRONICS	获取价格	高可靠性PNP双极性晶体管150 V、0.5 A
JANSR2N5551UBG	STMICROELECTRONICS	获取价格	高可靠性NPN双极性晶体管160 V、0.5 A
JANSR2N5551UBT	STMICROELECTRONICS	获取价格	高可靠性NPN双极性晶体管160 V、0.5 A
JANSR2N6987U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, LCC-20
JANSR2N7261	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
JANSR2N7261	MICROSEMI	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Meta
JANSR2N72610U	INFINEON	获取价格	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18
JANSR2N7261U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
JANSR2N7262	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR
JANSR2N7262U	INFINEON	获取价格	Rad hard, 200V, 5.5A, single, N-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC,