Datasheet > JANSR2N5154U3

JANSR2N5154U3

更新时间： 2024-09-24 07:56:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
8页	216K
描述
Small Signal Bipolar Transistor,

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中文翻译

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数据手册

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JANSR2N5154U3 数据手册

JANS 2N5152U3 and JANS 2N5154U3

ꢀ

Qualified Levels:

RADIATION HARDENED

JANSM, JANSD,

JANSP, JANSL,

JANSR, JANSF

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/544

DESCRIPTION

These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation

Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi

also offers numerous other products to meet higher and lower power voltage regulation

applications.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

U3 (SMD-0.5)

Package

ꢀ

JEDEC registered 2N5152 and 2N5154.

JANS RHA qualifications are available per MIL-PRF-19500/544.

Also available in:

TO-5 Package

(long-leaded)

JANS_2N5152L &

JANS_2N5154L

APPLICATIONS / BENEFITS

TO-39 Package

(leaded)

ꢀ

High frequency operation.

Lightweight.

JANS_2N5152 &

JANS_2N5154

High-speed power-switching applications.

High-reliability applications.

MAXIMUM RATINGS

Parameters/Test Conditions

Symbol

T_Jand T_STG

R_ꢀJA

Value

-65 to +200

Unit

ºC

ºC/W

Junction and Storage Temperature

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case

Reverse Pulse Energy ⁽¹⁾

175

R_ꢀJC

MSC – Lawrence

6 Lake Street,

Collector Current (dc)

I_C

Collector to base voltage (static), emitter open

Collector to emitter voltage (static) base open

Emitter to base voltage (static) collector open

Steady-State Power Dissipation @ T_A= +25 ºC

Steady-State Power Dissipation @ T_C= +25 ºC

V_CBO

V_CEO

V_EBO

P_D

100

5.5

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

P_D

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load

energy test circuit.

Website:

www.microsemi.com

ꢀ

T4-LDS-0100-2 Rev. 2 (06/02/14)

Page 1 of 8

12 3 4 5 6 7 8

中文翻译

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与JANSR2N5154U3相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N5401UBG	STMICROELECTRONICS	获取价格	高可靠性PNP双极性晶体管150 V、0.5 A
JANSR2N5401UBT	STMICROELECTRONICS	获取价格	高可靠性PNP双极性晶体管150 V、0.5 A
JANSR2N5551UBG	STMICROELECTRONICS	获取价格	高可靠性NPN双极性晶体管160 V、0.5 A
JANSR2N5551UBT	STMICROELECTRONICS	获取价格	高可靠性NPN双极性晶体管160 V、0.5 A
JANSR2N6987U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, LCC-20
JANSR2N7261	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
JANSR2N7261	MICROSEMI	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Meta
JANSR2N72610U	INFINEON	获取价格	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18
JANSR2N7261U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFCACE MOUNT(LCC-18)
JANSR2N7262	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?? TRANSISTOR

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