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JANSR2N3635UB PDF预览

JANSR2N3635UB

更新时间: 2024-09-23 19:17:47
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 47K
描述
Small Signal Bipolar Transistor, 1A I(C), PNP,

JANSR2N3635UB 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:SMALL OUTLINE, R-XDSO-N3
Reach Compliance Code:compliant风险等级:5.5
Is Samacsys:N最大集电极电流 (IC):1 A
配置:Single最小直流电流增益 (hFE):100
JESD-30 代码:R-XDSO-N3JESD-609代码:e0
端子数量:3最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANSR2N3635UB 数据手册

 浏览型号JANSR2N3635UB的Datasheet PDF文件第2页浏览型号JANSR2N3635UB的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
PNP SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/357  
DEVICES  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
2N3634  
2N3634L  
2N3634UB  
2N3635  
2N3635L  
2N3635UB  
2N3636  
2N3636L  
2N3636UB  
2N3637  
2N3637L  
2N3637UB  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
2N3634* 2N3636*  
2N3635* 2N3637*  
Parameters / Test Conditions  
Symbol  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
140  
140  
5.0  
1.0  
175  
175  
5.0  
1.0  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
TO-5*  
2N3634L, 2N3635L  
2N3636L, 2N3637L  
Total Power Dissipation @ TA = +25°C  
@ TC = +25°C  
1.0  
5.0  
1.5  
W
W
W
PT **  
UB: @ TC = +25°C  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
°C  
* Electrical characteristics for “L” suffix devices are identical to the “non L”  
corresponding devices.  
** Consult 19500/357 for De-Rating curves.  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
TO-39* (TO-205AD)  
2N3634, 2N3635  
2N3636, 2N3637  
Parameters / Test Conditions  
Symbol Min. Max.  
Unit  
OFF CHARACTERTICS  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
2N3634, 2N3635  
2N3636, 2N3637  
140  
175  
V(BR)CEO  
Vdc  
Collector-Base Cutoff Current  
VCB = 100Vdc  
100  
10  
10  
ηAdc  
μAdc  
μAdc  
ICBO  
VCB = 140Vdc  
2N3634, 2N3635  
2N3636, 2N3637  
VCB = 175Vdc  
Emitter-Base Cutoff Current  
VEB = 3.0Vdc  
3 PIN  
2N3634UB, 2N3635UB  
2N3636UB, 2N3637UB  
50  
10  
ηAdc  
μAdc  
IEBO  
VEB = 5.0Vdc  
Collector-Emitter cutoff Current  
ICEO  
10  
μAdc  
VCE = 100Vdc  
T4-LDS-0065 Rev. 1 (081247)  
Page 1 of 3  

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