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JANSM2N2222A/TR PDF预览

JANSM2N2222A/TR

更新时间: 2024-11-02 08:22:11
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 64K
描述
Small Signal Bipolar Transistor,

JANSM2N2222A/TR 数据手册

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
NPN SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/255  
DEVICES  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
JANSF – 300K Rads (Si)  
JANSG – 500K Rads (Si)  
JANSH – 1MEG Rads (Si)  
2N2221A  
2N2222A  
2N2221AL  
2N2221AUA  
2N2221AUB  
2N2221AUBC  
2N2222AL  
2N2222AUA  
2N2222AUB  
2N2222AUBC  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
75  
Vdc  
6.0  
Vdc  
Collector Current  
800  
mAdc  
Total Power Dissipation @ TA = +25°C  
TO-18 (TO-206AA)  
2N2221A, 2N2222A  
2N2221A, L  
2N2221AUA  
2N2221AUB, UBC  
2N2222A, L  
2N2222AUA  
2N2222AUB, UBC  
0.5  
PT  
W
0.65  
0.50  
Operating & Storage Junction Temperature Range  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
4 PIN  
2N2221AUA, 2N2222AUA  
Thermal Resistance, Junction-to-Ambient  
2N2221A, L  
2N2221AUA  
2N2221AUB, UBC  
2N2222A, L  
2N2222AUA  
2N2222AUB, UBC  
325  
210  
325  
°C/W  
RθJA  
1. Derate linearly 3.08 mW/°C above TA > +37.5°C  
2. Derate linearly 4.76 mW/°C above TA > +63.5°C  
3 PIN  
2N2221AUB, 2N2222AUB  
2N2221AUBC, 2N2222AUBC  
(UBC = Ceramic Lid Version)  
T4-LDS-0042 Rev. 2 (080857)  
Page 1 of 3  

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