Datasheet > JANSL2N5151L

JANSL2N5151L

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	173K
描述
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN

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JANSL2N5151L 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

PNP POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/545

DEVICES

LEVELS

JANSM – 3K Rads (Si)

JANSD – 10K Rads (Si)

JANSP – 30K Rads (Si)

JANSL – 50K Rads (Si)

JANSR – 100K Rads (Si)

JANSF – 300K Rads (Si)

2N5151

2N5151L

2N5151U3

2N5153

2N5153L

2N5153U3

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

100

5.5

2.0

Vdc

Adc

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

2N5151, 2N5153, L

2N5151U3, 2N5153U3

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽²⁾

@ T_A= +25°C ⁽³⁾

@ T_C= +25°C ⁽⁴⁾

1.0

1.16

100

TO-5

2N5151L, 2N5153L

(See Figure 1)

P_T

Operating & Storage Junction Temperature Range

T_J, T_stg

R_θJC

-65 to +200

°C

1.75 (U3)

Thermal Resistance, Junction-to Case

°C/W

Note:

1) Derate linearly 5.7mW/°C for T_A> +25°

2) Derate linearly 66.7mW/°C for T_A> +25°

3) Derate linearly 6.63mW/°C for T_A> +25°

4) Derate linearly 571mW/°C for T_A> +25°

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

TO-39 (TO-205AD)

2N5151, 2N5153

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 100mAdc, I_B= 0

V_(BR)CEO

Vdc

Emitter-Base Cutoff Current

_EB= 4.0Vdc, I_C= 0

I_EBO

1.0

µAdc

mAdc

V_EB= 5.5Vdc, I_C= 0

Collector-Emitter Cutoff Current

_CE= 60Vdc, V_BE= 0

I_CES

1.0

µAdc

mAdc

V_CE= 100Vdc, V_BE= 0

U-3

Collector-Base Cutoff Current

V_CE= 40Vdc, I_B= 0

I_CEO

µAdc

2N5151U3, 2N5153U3

T4-LDS-0131 Rev. 1 (091476)

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