Datasheet > JANSL2N3637UB

JANSL2N3637UB

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	47K
描述
Small Signal Bipolar Transistor,

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JANSL2N3637UB 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

PNP SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/357

DEVICES

LEVELS

JANSM – 3K Rads (Si)

JANSD – 10K Rads (Si)

JANSP – 30K Rads (Si)

JANSL – 50K Rads (Si)

JANSR – 100K Rads (Si)

2N3634

2N3634L

2N3634UB

2N3635

2N3635L

2N3635UB

2N3636

2N3636L

2N3636UB

2N3637

2N3637L

2N3637UB

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

2N3634* 2N3636*

2N3635* 2N3637*

Parameters / Test Conditions

Symbol

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

140

5.0

1.0

175

5.0

1.0

Vdc

Adc

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

TO-5*

2N3634L, 2N3635L

2N3636L, 2N3637L

Total Power Dissipation @ T_A= +25°C

@ T_C= +25°C

1.0

5.0

1.5

P_T**

UB: @ T_C= +25°C

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

°C

* Electrical characteristics for “L” suffix devices are identical to the “non L”

corresponding devices.

** Consult 19500/357 for De-Rating curves.

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

TO-39* (TO-205AD)

2N3634, 2N3635

2N3636, 2N3637

Parameters / Test Conditions

Symbol Min. Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

2N3634, 2N3635

2N3636, 2N3637

140

175

V_(BR)CEO

Vdc

Collector-Base Cutoff Current

V_CB= 100Vdc

100

ηAdc

μAdc

I_CBO

V_CB= 140Vdc

2N3634, 2N3635

2N3636, 2N3637

V_CB= 175Vdc

Emitter-Base Cutoff Current

V_EB= 3.0Vdc

3 PIN

2N3634UB, 2N3635UB

2N3636UB, 2N3637UB

ηAdc

μAdc

I_EBO

V_EB= 5.0Vdc

Collector-Emitter cutoff Current

I_CEO

μAdc

V_CE= 100Vdc

T4-LDS-0065 Rev. 1 (081247)

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