Datasheet > JANS2N2219AL

JANS2N2219AL

更新时间： 2024-11-25 22:55:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管
页数	文件大小	规格书
2页	62K
描述
NPN SWITCHING SILICON TRANSISTOR

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中文翻译

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数据手册
替代型号

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JANS2N2219AL 数据手册

TECHNICAL DATA

NPN SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 251

Devices

Qualified Level

JAN

2N2218

2N2218A

2N2218AL

2N2219

2N2219A

2N2219AL

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

2N2218 2N2218A; L

2N2219 2N2219A; L

Symbol

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

V_CEO

V_CBO

V_EBO

I_C

TO- 39* (TO-205AD)

2N2218, 2N2218A

2N2219, 2N2219A

5.0

6.0

Vdc

800

mAdc

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

@ T_C= +25⁰C⁽²⁾

0.8

3.0

⁰C

P_T

Operating & Storage Junction Temp. Range

-55 to +200

T_op_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

qJC

TO-5*

2N2218AL,

2N2219AL

1) Derate linearly 4.6 mW/⁰C above T_A> +25⁰C

2) Derate linearly 17.0 mW/⁰C above T_C> +25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_E= 10 mAdc

Vdc

2N2218; 2N2219

2N2218A; L; 2N2219A; L

V_(BR)CEO

Emitter-Base Cutoff Current

V_EB= 5.0 Vdc

V_EB= 6.0 Vdc

2N2218; 2N2219

2N2218A; L; 2N2219A; L

All Types

mAdc

hAdc

I_EBO

V_EB= 4.0 Vdc

Collector-Base Cutoff Current

V_CE= 30 Vdc

V_CE= 50 Vdc

2N2218; 2N2219

2N2218A; L; 2N2219A; L

I_CES

hAdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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JANS2N2219AL 替代型号

型号	品牌	替代类型	描述	数据表
2N2219AL	SEME-LAB	功能相似	Bipolar NPN Device in a Hermetically sealed TO5

与JANS2N2219AL相关器件

型号	品牌	获取价格	描述	数据表
JANS2N2221A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| TO-18
JANS2N2221AL	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 800MA I(C) \| TO-206AA
JANS2N2221AUA	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| SMT
JANS2N2221AUB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| CHIP
JANS2N2221AUBC	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANS2N2222A	MICROSEMI	获取价格	NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255
JANS2N2222AL	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 800MA I(C) \| TO-206AA
JANS2N2222AUA	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 800MA I(C) \| SMT
JANS2N2222AUB	MICROSEMI	获取价格	ELECTRICAL CHARACTERISTICS (TA = 25Â°C, unles
JANS2N2222AUB/TR	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,