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JANS1N937B PDF预览

JANS1N937B

更新时间: 2024-11-27 05:55:27
品牌 Logo 应用领域
CDI-DIODE 二极管
页数 文件大小 规格书
15页 494K
描述
DIODE 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35, HERMETIC SEALED, GLASS, DO-7, 2 PIN, Voltage Reference Diode

JANS1N937B 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknown风险等级:5.29
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified参考标准:MIL-19500/156M
标称参考电压:9 V表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL最大电压容差:5%

JANS1N937B 数据手册

 浏览型号JANS1N937B的Datasheet PDF文件第2页浏览型号JANS1N937B的Datasheet PDF文件第3页浏览型号JANS1N937B的Datasheet PDF文件第4页浏览型号JANS1N937B的Datasheet PDF文件第5页浏览型号JANS1N937B的Datasheet PDF文件第6页浏览型号JANS1N937B的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 1 October 2004.  
INCH-POUND  
MIL-PRF-19500/156M  
1 July 2004  
SUPERSEDING  
MIL-PRF-19500/156L  
18 September 2003  
* PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE  
TEMPERATURE COMPENSATED, TYPES 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1,  
AND 1N940B-1, 1N935BUR-1, 1N937BUR-1, 1N938BUR-1, 1N939BUR-1, AND 1N940BUR-1,  
JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY)  
TYPES JANTXVM, D, L, R, F, G, H, JANSM, D, L, R, F, G, H  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias  
current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type  
as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided  
for each encapsulated device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (DO-7 and DO-35) and figure 2 (DO-213AA).  
1.3 Maximum ratings. (Unless otherwise specified TA = +25°C).  
PT  
TSTG and T  
IZM (1)  
Power derating  
above TA = +25°C  
J
mW  
500  
mA dc  
50  
°C  
mW/°C  
3.33  
-65 to +175  
(1) To guarantee voltage temperature stability, it is necessary to maintain an IZ of 7.5mA dc.  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to  
Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  

与JANS1N937B相关器件

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JANS1N937BUR-1 MICROSEMI

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Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34,
JANS1N938B-1 MICROSEMI

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Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
JANS1N938BUR-1 MICROSEMI

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Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS, GLASS, LL34,
JANS1N938BUR-1 CDI-DIODE

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Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JANS1N939B CDI-DIODE

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Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, DO-7, 2 PIN
JANS1N939BUR-1 CDI-DIODE

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Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JANS1N941-1 CDI-DIODE

获取价格

Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO D
JANS1N941B CDI-DIODE

获取价格

Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO D
JANS1N941B-1 CDI-DIODE

获取价格

Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35, HERMETIC SEALED, DO-35, 2 PIN
JANS1N941BUR-1 CDI-DIODE

获取价格

Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS, SIMILAR T