JANS1N823UR-1

更新时间： 2024-11-25 11:21:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管齐纳二极管温度补偿
页数	文件大小	规格书
3页	232K
描述
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JANS1N823UR-1 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	DO-213AA
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.22
Is Samacsys：	N	其他特性：	METALLURGICALLY BONDED
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-213AA	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
最大功率耗散：	0.5 W	认证状态：	Qualified
参考标准：	MIL-19500/159M	标称参考电压：	6.2 V
表面贴装：	YES	技术：	ZENER
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
电压温度Coeff-Max：	0.31 mV/ °C	最大电压容差：	5%
Base Number Matches：	1

JANS1N823UR-1 数据手册

1N821 thru 1N829A-1 DO-7

6.2 & 6.55 Volt Temperature Compensated

Zener Reference Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes

provides a selection of both 6.2 V and 6.55 V nominal voltages and

temperature coefficients to as low as 0.0005%/^oC for minimal voltage

change with temperature when operated at 7.5 mA. These glass axial-

leaded DO-7 reference diodes are also available in JAN, JANTX, JANTXV,

and JANS military qualifications. Microsemi also offers numerous other

Zener Reference Diode products for a variety of other voltages up to 200 V.

DO-7

(DO-204AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N821 thru 1N829 series

Internal metallurgical bonds

Double anode option with 1N822 and 1N824 selection

•

Provides minimal voltage changes over a broad

temperature range

For instrumentation and other circuit designs

requiring a stable voltage reference

Reference voltage selection of 6.2 V & 6.55 V +/-5%

Maximum temperature coefficient selections

with further tight tolerance options at nominal of 6.35 V

available from 0.01%/ºC to 0.0005%/ºC

•

1N821, 823, 825, 827 and 829 also have military

qualification to MIL-PRF-19500/159 up to the JANS

level by adding JAN, JANTX, JANTXV, or JANS

prefixes to part numbers as well as the “-1” suffix, e.g.

JANTX1N829-1, etc.

Radiation Hardened devices available by changing

“1N” prefix to “RH”, e.g. RH827, RH 829, RH829A,

etc. Also consult factory for “RH” data sheet brochure

Military surface mount equivalents also available in

DO-213AA with UR-1 suffix and JAN, JANTX, or

JANTXV prefix, e.g. JANTX1N829UR-1 (see separate

data sheet)

Tight voltage tolerances with nominal reference

voltages of 6.35 V available by adding tolerance

1%, 2%, 3%, etc. after the part number for

identification e.g. 1N827-2%, 1N829A -1%, 1N829-

1-1%, etc.

•

Flexible axial-lead mounting terminals

Nonsensitive to ESD per MIL-STD-750 Method

1020

•

Also available in smaller axial-leaded DO-35 package

(see separate data sheet)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & StorageTemperature: -65^oC to +175^oC

•

CASE: Hermetically sealed glass case with DO-7

DC Power Dissipation: 500 mW @ T_L= 25^oC and

maximum current I_ZMof 70 mA. NOTE: For optimum

voltage-temperature stability, I_Z= 7.5 mA (less than 50

mW in dissipated power)

(DO-204AA) package

TERMINALS: Tin-lead plated and solderable per

MIL-STD-750, Method 2026

MARKING: Part number and cathode band (except

•

Solder temperatures: 260 ^oC for 10 s (maximum)

double anode 1N822 and 1N824)

POLARITY: Reference diode to be operated with

the banded end positive with respect to the

opposite end

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.2 grams.

See package dimensions on last page

Microsemi

Page 1

10-27-2003 REV C

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

JANS1N823UR-1 替代型号

型号	品牌	替代类型	描述	数据表
1N823UR-1	MICROSEMI	完全替代	6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes
CDLL823	MICROSEMI	功能相似	TEMPERATURE COMPENSATED ZENER DIODES

与JANS1N823UR-1相关器件

型号	品牌	获取价格	描述	数据表
JANS1N823UR-1-1	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N823UR-1-2	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N823URTR-1	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N823URTR-1-1	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N823URTR-1-2	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N824	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N824-1	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N824-1-1	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N824-1-2	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
JANS1N824-2	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated

与JANS1N823UR-1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

42
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

57

产品中心

服务支持

精选活动

关于我们

帮助中心

JANS1N823UR-1

JANS1N823UR-1 技术参数

JANS1N823UR-1 数据手册

JANS1N823UR-1 替代型号

与JANS1N823UR-1相关器件

与JANS1N823UR-1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANS1N823UR-1

JANS1N823UR-1 技术参数

JANS1N823UR-1 数据手册

JANS1N823UR-1 替代型号

与JANS1N823UR-1相关器件

与JANS1N823UR-1相关文章

您还可以找

您在本页遇到什么问题？